Kioxia Corporation

Yoichi Mizuta

Toru Ozawa

Yoshiaki Takahashi

Kouji Nakao

Kiyofumi Sakurai

Takahiro Tsurudo

Youichi Magome

Kenichi Matoba

Yoshifumi Shimamura

Takumi Kosaki

A semiconductor substrate includes a first circuit region, a second circuit region, and a third circuit region. A wiring layer includes a first boundary region that includes a first boundary between the first and second circuit regions, a second boundary region that includes a second boundary between the second and the third circuit regions, and a passing wiring region between the first and second boundary regions. The first boundary region includes a first wiring group, the second boundary region includes a second wiring group, and the passing wiring region includes a passing wiring group. The first wiring group, the second wiring group, and the passing wiring group are disposed in a same layer. A wiring disposed in a same layer as the passing wiring group and electrically connected to the second circuit region is included in any one of the first and second wiring groups.

Semiconductor memory device with wiring layer having defined first, second and passing wiring groups

According to one embodiment, a semiconductor device includes a circuit pattern including a plurality of unit patterns that are disposed in a repeating manner in at least one direction. The semiconductor device includes a discrimination pattern provided in the circuit pattern and configured to discriminate the unit patterns from each other.

Semiconductor device and method for manufacturing the same

A semiconductor storage device of an embodiment includes a wiring layer Mand a wiring layer M. The wiring layer Mincludes a signal line through which a data signal is transferred, and a plurality of dummy patterns formed of a material same as a material of the signal line. The wiring layer Mincludes a voltage supply line through which voltage Vdd is supplied and another voltage supply line through which voltage Vss is supplied. Each of the dummy patterns is electrically connected with any one of the voltage supply lines. In a dummy pattern disposed adjacent to the signal line, a surface facing the signal line is constituted by a first surface positioned at a first distance to the signal line and a second surface positioned at a second distance to the signal line, the second distance being different from the first distance.

Semiconductor storage device

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Yokohama, Japan

Yoichi Mizuta