Fujitsu Corporation

Fujitsu Semiconductor Limited

Socionext Inc.

Yoichi Kawano

Ikuo Soga

Toshihide Suzuki

Tadahiro Imada

Yasuhiro Nakasha

Hiroshi Matsumura

Alexander Nikolaevich Lozhkin

Tatsuya Hirose

Katsusada Motoyoshi

Daijiro Ishibashi

Shinji Yamaura

Masayuki Hosoda

Akiko Mineyama

A semiconductor device includes: a substrate; a circuit element disposed on a first surface side of the substrate; a first transmission line disposed on the first surface side; a first terminal disposed on the first surface side; a first dielectric disposed in a part of the first transmission line; a second terminal disposed on a side of the first dielectric opposite to the first transmission line; a second transmission line disposed on the first surface side and has one end coupled to the circuit element; a third terminal disposed on the first surface side and coupled to the other end of the second transmission line; a second dielectric disposed in a part of the second transmission line; a fourth terminal disposed on a side of the second dielectric opposite to the second transmission line; and a conductor disposed on a second surface side of the substrate.

Method of operating semiconductor device

Semiconductor device and semiconductor module

A semiconductor device includes an electric circuit configured to include, a transistor, a first pad coupled to a gate or a drain of the transistor, a second pad coupled to the gate or the drain of the transistor, a first wiring that extends from the gate or the drain of the transistor to the first pad, and a second wiring that diverges from the first wiring and extends to the second pad, and a redistribution layer formed over the electric circuit and configured to include a first redistribution coupled to the first pad, and a second redistribution coupled to the second pad to constitute a stub.

Semiconductor device and amplifier

An amplifier includes amplifier circuits connected in series between a ground and a power supply, each amplifier circuit includes: a transistor; and a first capacitance, one end of which is connected to a drain of the transistor, a first amplifier circuit connected closest to the power supply includes a load connected between the drain of the transistor and the power supply, each of the amplifier circuits except for the first amplifier circuit includes a load connected between the drain of the transistor of an own amplifier circuit and a source of the transistor of an amplifier circuit adjacent to the own amplifier circuit, each of the amplifier circuits except for an amplifier circuit connected farthest from the power supply includes a second capacitance connected between the source of the transistor and the ground, and the second capacitance has a capacitance value larger than a capacitance value of the first capacitance.

Amplifier

An amplifier circuit includes: a plurality of amplifiers; a plurality of monitor elements provided for each of the plurality of amplifiers and disposed on a same chip with the corresponding amplifier; and a processor configured to: measure characteristics of each of the plurality of monitor elements; reduce a difference in distortion between a plurality of signals output from the plurality of amplifiers based on the measured characteristics; and compensate for the distortion.

Amplifier circuit and antenna device

A semiconductor device includes: a semiconductor substrate; a first metal ring which is provided outside a periphery of a circuit region including a signal pad on one surface side of the semiconductor substrate and is interrupted by one or a plurality of openings; a second metal ring provided outside a periphery of the first metal ring; and a resistance layer that connects ends of the first metal ring interrupted by the one or the plurality of openings to each other, wherein the first metal ring includes a first wall portion and a second wall portion that sandwich the circuit region, and a third wall portion and a fourth wall portion that sandwich the circuit region and are connected to the first wall portion and the second wall portion, and the one or the plurality of openings is arranged in the first wall portion close to the signal pad.

Semiconductor device and electronic device

An amplifier includes an amplifier circuit configured to include a transistor that amplifies a signal, an insulating film provided over the amplifier circuit, an input pad provided over the insulating film and coupled to the transistor through a wiring in the insulating film, an output pad provided over the insulating film and coupled to the transistor through the wiring in the insulating film, and a metal layer provided over the insulating film to be grounded, and configured to include an opening that extends in a second direction intersecting with a first direction in a plane direction, the signal propagating from the input pad to the output pad in the first direction, and the opening being at a position overlapping the transistor.

Amplifier and amplification apparatus

An antenna integrated amplifier includes a board configured to include an antenna, a radiator that faces the board, a first supporter interposed between the board and the radiator to support the board with respect to the radiator, and configured to include an amplifier to amplify a signal communicated by the antenna, a first bump interposed between the board and the first supporter to be electrically coupled to the antenna and the amplifier, a second supporter interposed between the board and the radiator to support the board with respect to the radiator, and a second bump interposed between the board and the second supporter.

Antenna integrated amplifier and transmitter

A disclosed microwave heating apparatus includes a casing part configured to accommodate an object to be heated; a microwave generator configured to generate a microwave; an electromagnetic wave generator configured to generate an electromagnetic wave whose frequency is different from that of the microwave; an electromagnetic wave sensor configured to measure power of the electromagnetic wave, the power of the electromagnetic wave being measured after the electromagnetic wave incident on the casing part from the electromagnetic wave generator has passed through the object to be heated; and a controller configured to control, based on the power measured in the electromagnetic wave sensor, the microwave generator to generate the microwave.

Microwave heating apparatus and exhaust gas purification apparatus

A particulate filter includes a particulate capturing body configured to capture particulates contained in exhaust gas, and a dielectric waveguide provided around the particulate capturing body. The effective relative permittivity of the dielectric waveguide is higher than the effective relative permittivity of the particulate capturing body.

Particulate filter and exhaust gas purifier

A temperature compensation circuit includes: an oscillation circuit configured to include a replica amplifier of a target amplifier to be subjected to temperature compensation and oscillate by feeding an output of the replica amplifier back to an input; a time measurement circuit configured to measure a measured rise time taken from a start of oscillation of the oscillation circuit until an amplitude of an oscillation signal reaches a specific amplitude in the oscillation circuit; and a control circuit configured to compare a reference rise time of the oscillation circuit measured under a reference condition and the measured rise time and change a driving condition of the replica amplifier such that the measured rise time becomes substantially equal to the reference rise time.

Temperature compensation circuit and radar apparatus

A semiconductor device includes: diffusion layers that are formed over a semiconductor substrate in a first direction, that are separated from one another by separation regions, and that serve as drain regions or source regions of respective transistors; a gate electrode of the transistors, which is formed in the first direction so as to straddle the diffusion layers; gate extraction wirings that are formed above the separation regions so as to sandwich therebetween the individual diffusion layers in the first direction, that are electrically coupled to the gate electrode above the separation regions, and that supply a gate signal to the gate electrode.

Semiconductor device with multi-finger structure

A semiconductor integrated circuit includes a harmonic oscillator circuit, a first switch circuit configured to cause an oscillating state of the harmonic oscillator circuit to switch between an 'on' state and an 'off' state, a detector circuit configured to produce a voltage responsive to an amplitude of the oscillating output of the harmonic oscillator circuit, a decision circuit configured to detect whether the voltage produced by the detector circuit exceeds a threshold in synchronization with a clock signal, and a second switch circuit configured to control whether or not to apply noise from a noise source to the harmonic oscillator circuit.

Semiconductor integrated circuit

A patch antenna includes: a substrate configured with a dielectric material; a ground electrode formed on one side surface of the substrate; and a radiation electrode having a rectangular shape formed on another side surface of the substrate, wherein a slit is formed in the radiation electrode in parallel to a first side of the radiation electrode to be shorter than the first side, and each of a gap between the slit and the first side and a gap between the slit and a second side facing the first side is shorter than the first side.

Patch antenna

An amplifier includes two input terminals to receive a differential, two-tone transmission signal; two output terminals; a coil having terminals connected with the input terminals respectively, and a center tap; a first transistor having the gate connected with one terminal of the coil, and the output terminal connected with one output terminal; a second transistor having the gate connected with the other terminal of the coil, and the output terminal connected with the other output terminal; a diode having a terminal connected with the center tap; and a bias circuit connected with the other terminal of the diode to output a gate voltage to turn on the first and second transistors. The diode adjusts the terminal voltage depending on a signal level of a double harmonic wave of the transmission signal supplied to the terminal of the diode from the center tap.

Growing community of inventors

Setagaya, Japan

Yoichi Kawano