Japan Synthetic Rubber Co., Ltd.

Toshiba Silicone Co., Ltd.

Yoichi Kamoshida

Yoshiyuki Harita

Kunihiro Harada

Makoto Matsumoto

Yoshihiro Hosaka

Toshiaki Yoshihara

Hiroyuki Itoh

Nobuo Kawahashi

Yoshinori Yoshida

Masanori Suzuki

Shigeru Abe

Junichiro Watanabe

Takashi Kurata

Takao Miura

Tateki Furuyama

Masashige Takatori

Seiichi Atomori

Hiroshi Oka

Keigo Higaki

Yoshiaki Kawamura

Michio Zembayashi

Kouichi Sakurai

Chozo Okuda

Kouji Kanuma

Kazuto Shinohara

Koichi Sumi

Toshihiko Takahashi

A flame retarding resin composition comprising 100 parts by weight of a specific rubber-reinforced resin, 1-200 parts by weight of a phenol resin, 1-200 parts by weight of an organic phosphorus compound, 1-50 parts by weight of a nitrogen-containing compound, 0-40 parts by weight of an oligomer-type polymer containing a functional group, 0-30 parts by weight of a metal compound, a silicon compound, and/or polytetrafluoroethylene, and 0-300 parts by weight of a styrene-type resin. The composition has high impact resistance, excellent heat resistance, and a superior self-fire-extinguishing characteristic.

Flame retarding resin composition

A polyorganosiloxane-type thermoplastic resin having excellent slidability, abrasion resistance, weatherability, impact strength, fatigue resistance and chemical resistance is disclosed. The thermoplastic resin comprises a graft copolymer (IV) obtained by graft-polymerizing at least one vinyl monomer (v) onto a modified polyorganosiloxane obtained by polymerizing 80 to 99.8% by weight of an organosiloxane (I) having the structural unit described thereinabove, 0.1 to 10% by weight of at least one graft crosslinking agent (II) containing an alkoxysilyl group, selected from the group consisting of a vinyl-type graft crosslinking agent, a mercapto-type graft crosslinking agent, an acryloyl-type crosslinking agent and a vinylphenyl-type crosslinking agent, and 0.1 to 10% by weight of a compound (III) having two alkoxysilyl groups, provided that (I)+(II)+(III)=100% by weight.

Polyorganosiloxane-type thermoplastic resin

A process for producing a thermoplastic resin which comprises graft-polymerizing at least one vinyl monomer (IV) onto a modified polyorganosiloxane (III) obtained by condensation of from 90 to 99.8% by weight of an organosiloxane (I) having a structural unit represented by the formula R.sup.1.sub.n SiO.sub.(4-n)/2, wherein R.sup.1 represents a substituted or unsubstituted monovalent hydrocarbon group and n is an integer of from 0 to 3, and from 10 to 0.2% by weight of a graft crosslinking agent (II) having a modified alkoxysilane structure.

Process for producing thermoplastic resin

A positive type radiation-sensitive resin composition comprising an alkali-soluble novolac resin and a 1,2-quinonediazide compound, characterized in that said alkali-soluble novolac resin is a resin produced by condensing a carbonyl compound and a phenol mixture comprising 6 to 94 mole % of m-cresol and 94 to 6 mole % of at least one compound represented by the formula (I) other than m-cresol: ##STR1## wherein X is --CH.sub.3, --C.sub.2 H.sub.5, --C(CH.sub.3).sub.3, --CO.sub.2 CH.sub.3 or --CO.sub.2 C.sub.2 H.sub.5 ; n is an integer satisfying 3.gtoreq.m.gtoreq.1; and m is an integer satisfying 3.gtoreq.m.gtoreq.1, in which resin when the polystyrene-reduced molecular weight is determined by a gel permeation chromatography using a monodisperse polystyrene as the standard, maximum values a, b and c present, respectively, in the molecular weight ranges of 6,300 to 25,000, 2,500 to 6,000 and 150 to 900 in the molecular weight distribution curve obtained satisfy the following relationships: a/b=0-1.5 and c/b=1.4-2. Said positive type-radiation-sensitive resin composition is excellent in resolution, sensitivity, developability, thermal resistance and adhesion and hence is useful as a positive type resist for producing integrated circuits having a higher integration.

Positive type radiation-sensitive resin composition comprising a

An ionizing radiation sensitive resist consisting essentially of a polymer having a recurring unit represented by the following formula: ##STR1## wherein X is a hydrogen atom, a methyl group, or a halogen atom and R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5, which may be identical or different, are hydrogen atoms, halogen atoms, alkyl groups having 1 to 3 carbon atoms, alkoxy groups having 1 to 3 carbon atoms, haloalkyl groups having 1 to 3 carbon atoms or haloalkoxy groups having 1 to 3 carbon atoms, at least a part of the X groups present in said polymer being a halogen atom, at least a part of the Y.sup.1 and Y.sup.2 group present in said polymer being a halogen atom, and at least a part of the R.sup.1, R.sup.2, R.sup.3, R.sup.4 and R.sup.5 groups present in said polymer being a haloalkyl or haloalkoxy group having 1 to 3 carbon atoms. Said ionizing radiation sensitive resist is suitable as a negative type resist. This resist is used in the form of an organic solvent solution to form a coating film on a substrate and the desired parts of this coating film are irradiated with an ionizing radiation, whereby patterns are formed.

Process for forming patterns using ionizing radiation sensitive resist

A positive type photosensitive resin composition comprising an alkali-soluble novolac resin and (A) a compound represented by the following general formula (I) and a compound represented by the following general formula (II) or (B) a compound represented by the following general formula (III) and a compound represented by the following general formula (IV), wherein the molar ratio of the compound represented by the general formula (I) to the compound represented by the general formula (II) is 6/4-9/1 or the molar ratio of the compound represented by the general formula (III) to the compound represented by the general formula (IV) is 1/9-9/1 and the total amount of the component (A) or (B) is 5-100 parts by weight per 100 parts by weight of the alkali-soluble novolac resin: ##STR1## wherein R.sub.1, R.sub.5, R.sub.8 and R.sub.10, which may be identical or different, represent alkyl groups, aryl groups or aralkyl groups; and R.sub.2, R.sub.3, R.sub.4, R.sub.6, R.sub.7, R.sub.9, R.sub.11 and R.sub.12, which may be identical or different, represent 1,2-naphthoquinonediazide-4-sulfonyl groups, 1,2-naphthoquinonediazide-5-sulfonyl groups or 1,2-benzoquinonediazide-4-sulfonyl groups. Said positive type photosensitive resin composition is excellent in both sensitivity and yield of residual film thickness.

Positive type photosensitive resin composition with at least two

By adding a compound represented by the following general formulas: ##STR1## to a conventional photoresist composition comprising a cyclized product of conjugated diene homopolymer or copolymer and a photo-crosslinking agent soluble in an organic solvent, an image having a high degree of resolution can be obtained even when a base board having a surface of a high reflectance is used, with a high reproducibility and without being affected by prebaking conditions.

Photoresist composition

A photosensitive resin composition comprising a 1,2-quanonediazide compound and a copolymer consisting essentially of (A) a conjugated diolefinic compound, (B) a monoolefinically unsaturated compound and (C) an .alpha.,.beta.-ethylenically unsaturated carboxylic acid. Said composition can provide a positive type resist which is difficult to break and excellent in adhesion to a substrate.

Positive type photosensitive resin composition

By adding a compound represented by the following general formulas: ##STR1## to a conventional photoresist composition comprising a cyclized product of conjugated diene polymer or copolymer and a photo-crosslinking agent soluble in an organic solvent, an image having a high degree of resolution and only a small number of pinholes can be obtained even when a base board having a surface of a high reflectance is used.

A photoresist composition comprising a cyclized product obtained by contacting a conjugated diene polymer or copolymer having unsaturations in the main chain or side chains with a fluorine-containing substituted sulfonic acid compound represented by the formula:

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Yokohama, Japan

Yoichi Kamoshida