Mitsubishi Electric Corporation

Yoichi Hironaka

Junji Fujino

Yutaka Yoneda

Masuo Koga

Kazuyoshi Shige

A base plate () made of a metal has a through-hole (). An insulating substrate () is provided on the base plate (). A semiconductor chip () is provided on the insulating substrate (). A case () has a screw-hole () communicating with the through-hole (), covers the insulating substrate () and the semiconductor chip (), and is disposed on the base plate (). A screw () made of a metal is inserted into the through-hole () and the screw-hole () to fix the case () to the base plate (). A flexible material () having flexibility is filled in a cavity between a bottom surface of the screw-hole () in the case () and a distal end of the screw ().

Semiconductor device

An object of the invention is to provide: a manufacturing method for a highly reliable power semiconductor device which prevents breakage of an conductor pattern and an insulating layer, and has bonding strength higher than that by the conventional bonding between the electrode terminal and the conductor pattern; and that power semiconductor device. Breakage of the conductor pattern and the insulating layer is prevented due to inclusion of: a step of laying an electrode terminal on a protrusion provided on a conductor pattern placed on a circuit-face side of a ceramic board so that a center portion of a surface to be bonded of the electrode terminal makes contact with a head portion of the protrusion; a step of pressurizing and ultrasonically vibrating a surface opposite to the surface to be bonded, of the electrode terminal, using an ultrasonic horn, to thereby bond the electrode terminal to the conductor pattern.

Growing community of inventors

Tokyo, Japan

Yoichi Hironaka