Shinko Electric Industries Co., Ltd.

Yoichi Harayama

Michio Horiuchi

Keiichi Takemoto

Yukiharu Takeuchi

Takaharu Yamano

Yoji Asahi

Hiroyuki Asakawa

Takahiro Rokugawa

Shuzo Aoki

Nobuyuki Iijima

Hideki Yumoto

Koishiro Hayashi

Yusuke Muramatsu

An electrostatic chuck includes: a base body having: a mounting face on which an object to be adsorbed is to be mounted; and a back face that is opposite to the mounting face; an insulating layer that is formed on the back face; a heating element that is built in the insulating layer and configured to generate heat; and at least one thermal diffusion layer that is built in the base body and configured to diffuse the heat generated by the heating element. The at least one thermal diffusion layer is formed of a material higher in thermal conductivity than the base body.

Electrostatic chuck and substrate fixing device

There is provided a substrate fixing device. The substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate and configured to adsorb a subject by electrostatic force. The electrostatic chuck includes: an adsorptive layer configured to adsorb and retain the subject; and a heater layer that is provided between the adsorptive layer and the base plate and configured to heat the subject retrained by the adsorptive layer. A thickness of the heater layer is uniform over an entire area of the heater layer.

Substrate fixing device, electrostatic chuck, and method of manufacturing electrostatic chuck

A substrate fixing device includes: a base plate; and an electrostatic chuck that is fixed to the base plate to adsorb a substrate by electrostatic force. The electrostatic chuck includes: an adsorption layer that is formed of ceramic and that contacts the substrate to adsorb and hold the substrate; a first heating layer that is formed on the adsorption layer and that includes a first electrode; a second heating layer that is formed on the first heating layer and that includes a second electrode; and a via that is provided between the first electrode and the second electrode to electrically connect the first electrode and the second electrode to each other. The via includes a body portion, and an end portion that is connected to the body portion. A diameter of the end portion is larger than that of the body portion.

Substrate fixing device, electrostatic chuck and electrostatic chuck manufacturing method

A substrate fixing device includes a baseplate, an insulating layer over the baseplate, and an electrostatic chuck on the insulating layer. The insulating layer includes a heating element and a metal layer. The metal layer has a higher thermal conductivity than the insulating layer and is positioned closer to the electrostatic chuck than the heating element.

Substrate fixing device

A substrate fixing device includes a baseplate, an electrostatic chuck, and an insulating layer interposed between the baseplate and the electrostatic chuck. The insulating layer includes a heating element formed of a first material and a wiring line connected in series to the heating element. The wiring line includes a first conductive layer formed of the first material and a second conductive layer joined onto the first conductive layer. The second conductive layer is formed of a second material having a resistivity lower than the resistivity of the first material.

A substrate holding apparatus includes a baseplate, a heating unit disposed over the baseplate, and an electrostatic chuck disposed on the heating unit, wherein the heating unit includes a heating element having at least one roughened surface and an insulating layer enclosing the heating element, and the insulating layer and the electrostatic chuck are directly bonded to each other.

Substrate holding apparatus

A wiring substrate includes an insulating layer and a pad exposed from the insulating layer. An outermost surface of the insulating layer is modified to have a hydrophobic property by being stamped with silicone.

Wiring substrate, method for manufacturing wiring substrate, and method for modifying surface of insulating layer

A disclosed device includes a manufacturing method of semiconductor device including preparing a semiconductor substrate including semiconductor chip forming regions, scribing regions surrounding these regions, and cutting regions formed in the scribing regions and narrower than the scribing regions, forming check patterns and semiconductor chips, forming a resist film, forming through grooves narrower than the scribing regions and wider than the check patterns and the cutting regions, removing the check patterns with a wet blast process using the resist film and collectively forming grooves at portions of a protection film and the semiconductor substrate facing the through grooves, removing the resist film, forming internal connection terminals on the contacting faces, forming an insulating resin layer, forming a wiring forming face by removing until connecting faces are exposed, forming wiring patterns, and cutting the semiconductor substrate, the insulating resin layer, and a solder resist layer to separate into individual semiconductor devices.

Manufacturing method of preparing a substrate with forming and removing the check patterns in scribing regions before dicing to form semiconductor device

Insulating films () are formed on the surface of a semiconductor wafer () on the side on which a plurality of devices are formed. Then, conductor layers () are formed to cover opening portions from which electrode pads () of each device are exposed. Furthermore, a resist layer (R) is formed to have opening portions from which terminal formation portions of the conductor layer are exposed, and metal posts () are formed on the terminal formation portions of the conductor layer () using the resist layer (R) as a mask. Then, thinning of the semiconductor wafer () is performed to a predetermined thickness by grinding the back surface thereof. Thereafter, the resist layer (R) is removed; an unnecessary portion () of the conductor layer is further removed; sealing with sealing resin is performed with the top portions of the metal posts () being exposed; metal bumps are bonded to the top portions of the metal posts (); and the semiconductor wafer is divided into each device.

Method of manufacturing semiconductor device

A sintered body, for manufacturing a ceramic substrate, on which a via can be formed with high positional accuracy and the substrate is not warped and further the productivity is high. The sintered body includes a pillar-shaped ceramic body and metallic wiring rods provided in the ceramic body in parallel with the axis. The metallic wiring rods are made of metal, the melting point of which is lower than the sintering temperature of the sintered ceramic body.

Sintered body for manufacturing ceramic substrate

A semiconductor chip mount structure includes a substrate having a base surface on which base side connectors are formed; a semiconductor chip mounted on the base surface, the semiconductor chip having chip side connectors on a first surface thereof facing the base surface, the chip side connectors being electrically connected to the base side connectors; an insulating resin layer covering the chip side connectors and the base side connectors; a metal layer, made of a metal having a melting point lower than a temperature at which the electrical components of the semiconductor chip may be thermally destroyed, for covering the semiconductor chip and the insulating resin layer; and a wetting characteristic improving layer such as a metal powder or foil layer, formed along a contact surface between the metal layer and the insulation resin layer.

Structure and process for mounting semiconductor chip

A fired body for manufacturing a substrate is pillar-shaped and includes metallic wires arranged inside the fired body in parallel with its axis. The melting point of the metallic wires is higher than the melting point, pour point or softening point of an insulating base body of the fired body. A method of manufacturing a substrate includes the steps or: forming a pillar-shaped unfired body in which metallic wire rods having a melting point higher than the firing temperature of a fired body are embedded inside and in parallel with the axis; firing the unfired body at a temperature higher than the melting point of the fired body; and cutting the fired body in a direction perpendicular to the axis and to a predetermined thickness.

Fired body for manufacturing a substrate

A conductor circuit 12 made of aluminum is provided on a green sheet 10, the primary material of which is ceramic powder. The green sheets 10 are laminated and integrated into one body so that the conductor circuit 12 is not exposed onto the surface but is covered with the green sheet 10. The laminated body is fired at the firing temperature not lower than 660.degree. C. and a portion of the inner conductor circuit of the thus obtained sintered body is then exposed onto a surface of the substrate.

Ceramic circuit board and manufacturing method thereof

Internal wiring made of copper of low-resistance is provided in a ceramic oxide. Green sheets 10 made of oxide powder are provided with plane wiring 18 and/or via wiring 14 in which copper is used as wiring material. The green sheets 10 are laminated and integrated in such a manner that the wiring portions 4 and 18 are covered with the green sheet so as not to be exposed onto a surface. Then the laminated body is fired at a maximum temperature in a range from 1,083.degree. to 1,800.degree. C.

Growing community of inventors

Nagano, Japan

Yoichi Harayama