Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Denki K.k.

Yoichi Akasaka

Tadashi Nishimura

Katsuhiro Tsukamoto

Yoshihiro Hirata

Hiroshi Harada

Masahiko Denda

Haruhiko Abe

Hiromi Sakurai

Shigeji Kinoshita

Oxygen ions or nitrogen ions are implanted into a semiconductor substrate to form a dielectric layer in the semiconductor substrate. An epitaxial semiconductor layer of at least 2 .mu.m in thickness, having excellent reproducibility and good crystallinity, is formed on a residual semiconductor layer on the dielectric layer by epitaxial growth, to serve as a region for forming semiconductor elements. Thus, a semiconductor device having high isolation breakdown voltage is impemented. Further, both oxygen ions and nitrogen ions are respectively implanted into a portions of a semiconductor substrate, which are adjacent to each other along the direction of thickness, to form two dielectric layers. Thus, a semiconductor device having higher isolation breakdown voltage is implemented.

Method of manufacturing a semiconductor device

Described is a semiconductor device comprising a metal wiring formed on a semiconductor wiring including a device or devices, wherein impurities are injected into the metal wiring by ion implantation for suppressing the whiskers that may otherwise develop during processing of the metal wiring. Shorting among the wiring layers caused by such whiskers may be suppressed and the yield rate and operational reliability of the semiconductor device may be improved.

Semiconductor device

A stacked semiconductor device includes a first integrated circuit formed on the principal surface of a semiconductor layer and containing active elements, and a second integrated circuit formed on the first integrated circuit through an insulation layer and containing active elements. The second integrated circuit is formed on that part of the surface of the first integrated circuit which is exclusive of selected active elements, to establish an open space for heat dissipation.

Stacked semiconductor device

A nitride film is formed on a main surface of a semiconductor substrate by plasma CVD process and an oxygen-containing layer is formed on the nitride film and an aluminum-containing film is further formed on the oxygen-containing layer.

Process for preparing semiconductor device

A method of manufacturing a semiconductor device utilizing a monocrystalline silicon layer includes forming and irradiating a polycrystalline silicon layer to increase the grain size thereof, and forming an epitaxial layer thereover. Both layers are then irradiated to convert them into high quality monocrystalline silicon.

Method of fabricating semiconductor devices

A process for preparing a semiconductor device having a walled emitter structure covering at least one side surface with a dielectric layer for separation of devices comprises a step of forming a base by implantation of ions with a resist mask for base; a step of forming an emitter by implantation of ions from an emitter-opening part; and a step of formation an active base in a base just below said emitter by implantation of ions from said emitter-opening part.

Growing community of inventors

Itami, Japan

Yoichi Akasaka