Canon Anelva Corporation

Yohsuke Shibuya

Naomu Kitano

Koji Yamazaki

Takuya Seino

Yu Sato

Akira Matsuo

Junji Nakamura

Yasuyuki Shirai

Eitaro Morimoto

Shunichi Wakayanagi

Takayuki Saito

Hirofumi Asanuma

Eitaroh Morimoto

The present invention provides a means capable of determining the surface state of the target to execute accurate and quick cleaning of necessary part. The means includes: a magnet unit capable of forming a magnetic field on the surface of a target; a rotary system capable of driving the magnet unit to change the magnetic field pattern; and an ammeter configured to measure target current when the magnetic field is formed by the magnet unit and discharge voltage is applied to a target electrode to which the target is attached. The position of the magnet unit is variously changed by the rotary system, and the target current is measured at each position and compared with a reference value. It is then determined whether cleaning is necessary at each position, so that cleaning can be performed only for necessary part.

Sputtering apparatus

It is an object of the present invention to provide an electronic component manufacturing method, capable of suppressing reduction in a trench opening and suppressing diffusion of a metal film embedded in a trench. An embodiment of the present invention is an electronic component manufacturing method, including the steps of: forming a first electrode constituting layer (e.g., a TiAl film) in a recess (e.g., a trench) formed in a workpiece; forming an ultrathin barrier layer (e.g., a TiAlN film) by forming a nitride layer by plasma-nitriding a surface of the first electrode constituting layer; and forming a second electrode constituting layer (e.g., an Al wiring layer) on the ultrathin barrier layer.

Electronic component manufacturing method and electrode structure

The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.

Electronic component manufacturing method including step of embedding metal film

There is provided a substrate support device capable of preventing powder dust from being produced. A thermoconductive intermediate member is interposed between a base table and a substrate support table and has a communication aperture path for communicating the aperture path of the base table with the aperture path of the substrate support table. An elastic member such as bellows tube is disposed in the communication aperture path of the thermoconductive intermediate member, for insulating the thermoconductive intermediate member from the inert gas which flows through the communication aperture path.

Substrate support device and plasma processing apparatus

Growing community of inventors

Kawasaki, Japan

Yohsuke Shibuya