Sharp Kabushiki Kaisha Corporation

Yohsuke Kanzaki

Takao Saitoh

Seiji Kaneko

Masaki Yamanaka

Masahiko Miwa

Yi Sun

Yudai Takanishi

Masao Moriguchi

Yutaka Takamaru

Kazuatsu Ito

Yoshiki Nakatani

Keisuke Ide

Takatsugu Kusumi

Tetsuya Okamoto

Makoto Nakazawa

Hiroshi Matsukizono

Tsuyoshi Inoue

Tohru Okabe

Tadayoshi Miyamoto

Yuhichi Saitoh

Yuichi Saito

Kenji Nakanishi

Hiroyuki Moriwaki

Hirohiko Nishiki

Yasuaki Iwase

Shinsuke Saida

Yoshimasa Chikama

Takuya Matsuo

Ryosuke Gunji

Shinji Ichikawa

Shigeyasu Mori

Mayuko Sakamoto

Tokuo Yoshida

Michiko Takei

Tetsuo Fukaya

Yl Sun

A display device of the present disclosure has a display region including a thin-film transistor, a terminal section, and a bending portion provided between the display region and the terminal section, and the display device includes the following: a resin layer provided above a base in the bending portion; an insulating layer provided to cover the resin layer; and a first wire provided above the insulating layer and extending in a first direction to electrically connect the thin-film transistor and the terminal section together, the first direction being a direction where the display region and the terminal section are disposed, wherein in the bending portion, the resin layer has at least one hole or dent overlapping the first wire in a plan view, and the insulating layer has at least one opening overlapping the at least one hole or dent in a plan view.

Display device and method for manufacturing display device

A non-display region is provided within a display region, a through-hole is provided in the non-display region, a plurality of inner protruding portions are provided in the non-display region so as to surround the through-hole, a lower resin layer of each of the inner protruding portions is separated by a plurality of inner slits formed in the resin substrate layer, some of the plurality of display wiring lines are separated by the through-hole, and a first non-display conductive layer at a bottom portion of the inner slit closest to the display region side is provided so as to overlap the display wiring line separated by the through-hole at one end portion on a side of the through-hole and another end portion on a side of the through-hole.

Display device and method for manufacturing same

A resin substrate layer and a first inorganic insulating film on the resin substrate layer are provided. A notch is provided to an end portion of the resin substrate layer. A first inorganic-insulating-film-free region is provided along the notch. From the first inorganic-insulating-film-free region, the first inorganic insulating film is removed.

Display device including an inorganic-insulating-film-free region provided along a notch to strengthen the structure of the display device

A display device according to an aspect of the disclosure includes a display region. The display region is provided with a plurality of first grooves and a plurality of second grooves formed between adjacent control lines and spaced apart from the plurality of control lines, in a plan view. Each of the plurality of first grooves extends in a second direction along a coupling semiconductor layer, between the adjacent control lines, in a plan view. Each of the plurality of second grooves extends in a direction intersecting a first groove of the plurality of first grooves, and is adjacent to at least one end portion of the first groove.

Display device

A display device in accordance with the disclosure includes a substrate, an insular semiconductor layer, a gate insulation film, a plurality of control lines extending in a row direction, a first interlayer insulation film, and a plurality of data signal lines extending in a column direction, all of which are provided in a stated order. The insular semiconductor layer, residing in a display area, is electrically separated from the plurality of control lines and the plurality of data signal lines and overlaps one of the plurality of control lines in a plan view taken normal to the substrate.

A first connection wire electrically connected to a first electrode via a first through-hole formed in a second flattening film, and a second connection wire electrically connected to the first connection wire via a second through-hole formed in a first flattening film are provided, and a second interlayer insulating film has a contact opening so as to pass through the second interlayer insulating film to overlap the first connection wire, and such that the edge of the contact opening surrounds the first through-hole and the second through-hole in a plan view.

Display device with interlayer insulating film having column slit for power-source line

A display device includes a resin substrate and a thin film transistor layer. The thin film transistor layer includes a first inorganic insulating film, a second inorganic insulating film, and a lead-out wiring line. A frame region includes a bending portion provided with a slit constituted with a first slit and a second slit. Portions of the first inorganic insulating film on both sides in a width direction of the first slit constituting step portions are exposed from the second inorganic insulating film inside the second slit. The lead-out wiring line is electrically connected to the thin film transistor. The step portions are provided with a protruding portion having an island shape. The lead-out wiring line includes an opening covering perimeter edge surface of the protruding portion and exposing an upper face of the protruding portion.

Display device with slits and island-shaped protruding portions in the bending regions

A display device of the present disclosure has the following: a display region including a thin-film transistor; a frame region surrounding the display region; a terminal section provided in the frame region; a resin layer provided above a base; an inorganic insulating layer provided on the resin layer and having an opening; and a conductive pattern provided on the inorganic insulating layer in a location except a location over the opening.

A display device () includes: a substrate (); and a first transistor (a) formed on the substrate (). The first transistor (a) includes: an oxide semiconductor layer () formed on the substrate (); a gate insulating layer () formed on the oxide semiconductor layer (); and a gate electrode () formed on the gate insulating layer (). The oxide semiconductor layer () includes: a conductive region (a) provided with conductivity; a first resistance region (b) positioned below the gate electrode (); and a second resistance region (c) provided between the conductive region (a) and the first resistance region (b), and positioned outside the gate electrode (). The first resistance (b) is larger in resistance than the second resistance region (c).

Method for manufacturing display device, and display device

A first resin layer is provided to fill a slit formed in at least one inorganic insulating film included in a TFT layer, and extending in a longitudinal direction of a fold portion. A plurality of first routed wires are provided above the first resin layer, and extending in parallel with one another and intersecting with the longitudinal direction of the fold portion. A first protective layer is formed between, and in contact with, the first resin layer and the first routed wires, and provided to at least partially coincide with each of the first routed wires.

In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.

Method for manufacturing active matrix substrate, and active matrix substrate

A first metal layer that is formed by a first metal film is provided in an island shape along a pair of third wiring lines that is adjacent to each other. The first metal layer overlaps a region that is surrounded by a pair of first wiring lines, among several first wiring lines extending parallel to each other and formed by a first metal film, that is adjacent to each other, and the pair of third wiring lines, among several third wiring lines extending parallel to each other and in a direction intersecting each of the several first wiring lines.

A display device includes a substrate; a semiconductor layer; a gate insulating film; a gate electrode; a first interlayer insulating film; a capacitance electrode; and a second interlayer insulating film. Each of a pixel circuits includes a drive transistor, a capacitor and a connection wiring line. The capacitance electrode is provided with a first opening and a second opening in portions of positions overlapping with the gate electrode in plan view. The first interlayer insulating film and the second interlayer insulating film include a contact hole provided at a position surrounded by the first opening and a hole provided at a position surrounded by the second opening. The connection wiring line is provided on the second interlayer insulating film and is connected to the gate electrode via the contact hole. The hole overlaps with a portion of a channel region in plan view.

Display device and manufacturing method

First overlying wires are provided between a display area and a bending portion, extending parallel to each other in a direction crossing the direction in which the bending portion extends. Underlying wires are provided between a first resin layer and a second resin layer on a resin substrate, extending across a slit and parallel to each other in a direction crossing the direction in which the bending portion extends. The first overlying wires are electrically connected respectively to the underlying wires via first contact holes formed through the second resin layer and inorganic insulation films.

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Sakai, Japan

Yohsuke Kanzaki