Sanyo Electric Co., Ltd.

Yohko Naruse

Naoteru Matsubara

Yoshiki Murayama

Yoshinori Shishida

Makoto Izumi

Hitoshi Hirano

Kazunori Fujita

Kazunari Honma

Katsuji Mabuchi

Eiji Yuasa

An electrostatic operation device in which a variation in the amount of electric charges accumulated in an electret film caused by physical impact can be suppressed. The electrostatic operation device (electrostatic induction power generating device ()) comprises movable electrodes (), an electret film () so formed as to face the movable electrodes () at a space therebetween, and a stopper () for suppressing the approach of the movable electrodes () to the electret film () within a predetermined space.

Electrostatic operation device

An electrostatic generator includes a substrate, an electrode formed on or in a surface of the substrate, an electret film provided so as to be opposed to the electrode and an insulating film on an electrode side formed on a surface of the electrode on a side opposed to the electret film.

Electrostatic generator comprising an electret film

A power generating apparatus () is provided with first substrates () whereupon a first electrode () is arranged on one surface; a second substrate () which includes a second electrode () arranged to face a first electrode on the one surface side of the first substrate; and sliding mechanisms (and) arranged at least on the one surface side or the other surface side of the first substrate. The sliding mechanism holds the first substrate so that the first substrate moves relatively to the second substrate in a second direction (X direction) while suppressing movement of the first substrate in a first direction (Z direction).

Power generating apparatus having ball bearings

An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section () having a movable electrode (), a fixed electrode section () having an electret film () opposed to the movable section () at a predetermined distance and capable of storing charge and a conductive layer () formed on a predetermined region on the upper surface of the electret film (), and an insulating film () interposed between the electret film () and the conductive layer ().

Electrostatic acting device including an electret film

An electrostatic acting device in which leakage of charge from an electret film is suppressed. The electrostatic acting device comprises a movable electrode section () having a movable electrode () and a fixed electrode section () having an electret film () opposed to the movable electrode section () at a predetermined distance and capable of storing charge and a conductive layer () formed on a predetermined region on the upper surface of the electret film (). The conductive layer () is formed on the surface of a region of the electret film (), and the region is projected.

Electrostatic acting device including an electret film and an electrostatic power generator including an electret film

A semiconductor apparatus is constructed such that the top surface, contacting a barrier metal film, of a conducting film embedded in a trench is located below the top surface of a second interlayer insulating film. The semiconductor apparatus is fabricated such that a plasma treatment is performed in a non-nitriding environment after a polishing process using CMP, so as to form a damaged layer on top of the second interlayer insulating film and the conducting film, and a portion of the damaged layer is removed by etching.

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Ichinomiya, Japan

Yohko Naruse