Mitsubishi Electric Corporation

Tokyo Institute of Technology

Yohei Yuda

Tatsuro Watahiki

Akihiko Furukawa

Yuki Takiguchi

Shinsuke Miyajima

An object is to provide a technology that can enhance electrical characteristics of a semiconductor device. A semiconductor device is a semiconductor device provided with a semiconductor element. The semiconductor device includes: an n-type single-crystal gallium oxide layer including a first main surface; an electrode disposed on the first main surface of the n-type single-crystal gallium oxide layer or above the first main surface, the electrode being an electrode of the semiconductor element; a p-type oxide semiconductor layer disposed between the n-type single-crystal gallium oxide layer and the electrode; and an amorphous gallium oxide layer disposed between the n-type single-crystal gallium oxide layer and the p-type oxide semiconductor layer.

Semiconductor device

In order to provide a power semiconductor device reducing a leakage current due to a defect layer and having a small fluctuation in a threshold voltage, included are an n-type epitaxial film layer formed on a surface of the single crystal n-type semiconductor substrate and having a concave portion and a convex portion; an insulating film formed on a first region in a top portion of the convex portion; a p-type thin film layer formed on a surface of the insulating film and a surface of the n-type epitaxial film layer to form a pn junction between the p-type thin film layer and the n-type epitaxial film layer; and an anode electrode, at least part of which is formed on a surface of the p-type thin film layer and part of which passes through the p-type thin film layer and the insulating film.

Power semiconductor device

An object is to provide a technology for enabling prevention of deterioration of characteristics of an oxide semiconductor device. The oxide semiconductor device includes an n-type gallium oxide epitaxial layer, a p-type oxide semiconductor layer, and an oxide layer. The p-type oxide semiconductor layer is disposed above the n-type gallium oxide epitaxial layer, contains an element different from gallium as a main component, and has p-type conductivity. The oxide layer is disposed between the n-type gallium oxide epitaxial layer and the p-type oxide semiconductor layer, and is made of a material different from gallium oxide and different at least partly from a material of the p-type oxide semiconductor layer.

Oxide semiconductor device and method for manufacturing same

An n-type semiconductor layer has a single-crystal structure and is made of a wide-gap semiconducting material. A p-type semiconductor layer is provided on the n-type semiconductor layer and made of a material different from the aforementioned wide-gap semiconducting material, and has either a microcrystalline structure or an amorphous structure. An electrode is provided on at least one of the n-type semiconductor layer and the p-type semiconductor layer.

An oxide semiconductor device has an improved withstand voltage when an inverse voltage is applied, while suppressing diffusion of different types of materials to a Schottky interface. The oxide semiconductor device includes an n-type gallium oxide epitaxial layer, p-type oxide semiconductor layers of an oxide that is a different material from the material for the gallium oxide epitaxial layer, a dielectric layer formed to cover at least part of a side surface of the oxide semiconductor layer, an anode electrode, and a cathode electrode. Hetero pn junctions are formed between the lower surfaces of the oxide semiconductor layers and a gallium oxide substrate or between the lower surfaces of the oxide semiconductor layers and the gallium oxide epitaxial layer.

Oxide semiconductor device and method of manufacturing oxide semiconductor device

A p-type oxide semiconductor is prevented from being oxidized by oxygen in an n-type oxide semiconductor even if the p-type oxide semiconductor is provided as a termination structure in the n-type oxide semiconductor. A semiconductor device includes an n-type gallium oxide substrate, an anode electrode joined to the n-type gallium oxide substrate, and a cathode electrode provided on the n-type gallium oxide substrate. Current flows between the anode electrode and the cathode electrode via the n-type gallium oxide substrate provided between the anode electrode and the cathode electrode. The semiconductor device further includes a p-type oxide semiconductor layer provided adjacent to a junction between the anode electrode and the n-type gallium oxide substrate, and a nitride layer provided between the p-type oxide semiconductor layer and the n-type gallium oxide substrate.

Growing community of inventors

Tokyo, Japan

Yohei Yuda