Toshiba Memory Corporation

Kioxia Corporation

Kabushiki Kaisha Toshiba

Yohei Yasuda

Masashi Nakata

Nobuhiro Tsuji

Shota Note

Hiroki Ohkouchi

Masaru Koyanagi

Kensuke Yamamoto

Yasuhiro Hirashima

Hiromitsu Komai

Hidefumi Kushibe

Toshihiro Yagi

A semiconductor device having a first differential amplification circuit is disclosed. The first differential amplification circuit includes a first input transistor having a gate configured to receive a first signal, a second input transistor having a gate configured to receive a second signal, a first current source connected to a source of the first input transistor and a source of the second input transistor, a first transistor that is connected in parallel to the source of the first input transistor and the source of the second input transistor and has a gate configured to receive the first signal, and a second transistor that is connected in series to the first transistor and has a gate configured to receive a control signal.

Semiconductor device

A semiconductor device includes: a drift detection circuit that retrieves a previously-determined first delay amount of a reference signal passing through a circuit element at a first timing, determines a second delay amount of the reference signal passing through the circuit element at a second timing, and outputs a drift amount that is a difference between the first and second delay amounts; and a delay amount adjustment circuit that retrieves a previously-determined third delay amount of a first signal transmitted to an external device at the first timing, determines a fourth delay amount based on the third delay amount and the drift amount as a delay amount to be applied to the first signal in a period after the second timing, and transmits the first signal to which the fourth delay amount has been applied, to the external device.

Semiconductor device and memory system

A semiconductor device includes a relay chip configured to be connected to a host; a first chip connected to the relay chip via a first channel; and a second chip connected to the relay chip via a second channel. The relay chip is configured to receive, from the host, a first enable signal for selecting the first channel and a second enable signal for selecting the second channel. During a first period in which the first enable signal is maintained at a non-active level and the second enable signal is maintained at an active level, the relay chip is configured to perform, in parallel, a first data transfer operation via the first channel and a first command issuing operation via the second channel.

Semiconductor device including relay chip

A timing detection circuit includes: a delay circuit in which a plurality of cascade connected delay elements are arranged in a matrix; a plurality of odd-numbered row column lines provided in each column for each set by dividing odd-numbered rows into a plurality of sets; a plurality of even-numbered row column lines provided in each column for each set by dividing even-numbered rows into a plurality of sets; a first logical operation circuit performs a logical operation on levels of the odd-numbered row column lines and outputs a first operation result to a second latch; a second logical operation circuit performs a logical operation on levels of the plurality of even-numbered row column lines and outputs a second operation result to a third latch; and a control circuit given the first operation result and controls charging of the odd-numbered and even-numbered row column lines based on the second clock.

Timing detection circuit, semiconductor device, and memory system having delay elements in matrix

According to one embodiment, in a first differential amplifier circuit of a semiconductor device, a first transistor receives an input signal at the gate. A second transistor forms a differential pair with the first transistor. The second transistor receives a reference signal at the gate. A third transistor is connected in series with the first transistor. A fourth transistor is connected in series with the second transistor. A fifth transistor is disposed on the output side. The fifth transistor forms a first current mirror circuit with the fourth transistor. A sixth transistor is connected to the drain of the second transistor in parallel with the fourth transistor. The sixth transistor forms a second current mirror circuit with the fifth transistor. A first discharge circuit is connected to the source of the sixth transistor.

According to one embodiment, there is provided a semiconductor device comprising a first differential amplifier circuit. The first differential amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. The second transistor's gate and drain are connected to the first transistor. The third transistor is diode-connected through the first transistor or diode-connected without passing through the first transistor. Thea fourth transistor is diode-connected through the second transistor or diode-connected without passing through the second transistor. The fifth transistor forms a first current mirror circuit with the third transistor. The sixth transistor is connected to a drain of the first transistor in parallel with the third transistor and forms a second current mirror circuit with the fifth transistor.

According to one embodiment, in a semiconductor device, the first pull-up circuit is connected to a third node and to a fourth node. The third node is a node between a drain of the first transistor with a first conductivity type and a source of the second transistor with the first conductivity type. The fourth node is a node between a drain of the third transistor with the first conductivity type, and a source of the fourth transistor with the first conductivity type and a source of the fifth transistor with the first conductivity type. The first pull-down circuit is connected to a fifth node and to a sixth node. The fifth node is a node between a drain of the first transistor with a second conductivity type and a source of the second transistor with the second conductivity type. The sixth node is a node between a drain of the third transistor with the second conductivity type and a source of the fourth transistor with the second conductivity type and a source of the fifth transistor with the second conductivity type.

According to one embodiment, there is provided a semiconductor device comprising a first differential amplifier circuit. The first differential amplifier circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, and a sixth transistor. The second transistor's gate and drain are connected to the first transistor. The third transistor is diode-connected through the first transistor or diode-connected without passing through the first transistor. The fourth transistor is diode-connected through the second transistor or diode-connected without passing through the second transistor. The fifth transistor forms a first current mirror circuit with the third transistor. The sixth transistor is connected to a drain of the first transistor in parallel with the third transistor and forms a second current mirror circuit with the fifth transistor.

A semiconductor device having a first inverter electrically connected to a first node. A second inverter is electrically connected to a second node. A third clocked inverter is electrically connected to an output node of the first inverter. A fourth clocked inverter is electrically connected to an output node of the second inverter. A third inverter is electrically connected to an output node of a first clocked inverter and an output node of a second clocked inverter. A fourth inverter is electrically connected to an output node of the third clocked inverter and an output node of the fourth clocked inverter. A comparison circuit is electrically connected to an output node of the third inverter and an output node of the fourth inverter.

Semiconductor device and memory system for combining reversed-phase data

A semiconductor integrated circuit includes a register, a detection circuit, and a generation circuit. The register stores a detection start timing of a reference delay amount based on a first clock during a first period. The first period is a period in which the first clock starts to be input. The detection circuit has a plurality of delay stages. The detection circuit detects the reference delay amount at the start timing during the first period and obtains the number of delay stages corresponding to the reference delay amount. The generation circuit adjusts a duty ratio of the first clock based on the number of delay stages obtained by the detection circuit and generates a second clock during a second period. The second period is a period continuing from the first period.

Semiconductor integrated circuit and semiconductor device

According to one embodiment, an amplifier includes a first inverter which inverts and delays a first signal to generate a second signal. A second inverter inverts and delays a third signal to generate a fourth signal. A first transistor includes a gate electrode supplied with the second signal. A second transistor includes a gate electrode supplied with the fourth signal. An output terminal is coupled to one terminal of the second transistor and outputs a fifth signal. A third inverter inverts and delays the fifth signal to generate a sixth signal. A first discharge circuit discharges one terminal of the first transistor and the one terminal of the second transistor based on the first, sixth, or fourth signal, and includes one terminal coupled to the other terminal of each of the first and second transistors.

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Yokohama Kanagawa, Japan

Yohei Yasuda