Disco Corporation

Yohei Yamashita

Tsubasa Obata

Kenji Furuta

Yuki Ogawa

Yihui Lee

Yoshiaki Yodo

Yukio Morishige

Kentaro Iizuka

Senichi Ryo

Yukinobu Ohura

Kenji Asano

Nobuyasu Kitahara

Takashi Sampei

A wafer processing method includes a protective member laying step of placing a protective member on a face side of a wafer, a reverse side grinding step of grinding a reverse side of the wafer to thin the wafer, a cut groove forming step of positioning a cutting blade in alignment with projected dicing lines one at a time on the reverse side of the wafer, cutting the wafer with the cutting blade to form cut grooves in the wafer which terminate short of the face side thereof, and a cutting step of applying a laser beam to the wafer from the reverse side thereof along the cut grooves to completely sever the wafer along the projected dicing lines into individual device chips.

Method of dicing a wafer by pre-sawing and subsequent laser cutting

Disclosed herein is a protective film forming resin agent to be used for laser processing including a water-soluble resin, and particulates of a metal oxide which are dispersed in an aqueous solution of the resin and a section of which has an elongated shape having a major axis and a minor axis orthogonal to the major axis. The particulates of the metal oxide the section of which has the elongated shape having the major axis and the minor axis orthogonal to the major axis are dispersed in the aqueous solution of the resin. When the aqueous solution is applied to a workpiece to form a protective film on the workpiece and then the workpiece is subjected to laser processing, therefore, absorbance of a laser beam in the protective film is enhanced, so that processing efficiency is enhanced.

Protective film forming resin agent and laser processing method

A wafer processing method divides a wafer into individual device chips along division lines. The method includes attaching an adhesive tape to the front side of the wafer and attaching a peripheral portion of the adhesive tape to an annular frame having an inside opening for receiving the wafer, thereby supporting the wafer through the adhesive tape to the annular frame; grinding the back side of the wafer to reduce the thickness of the wafer; cutting the back side of the wafer along each division line by using a cutting blade to form a cut groove having a depth not reaching the front side of the wafer; and applying a laser beam to the bottom of the cut groove from the back side of the wafer along each division line to divide the wafer to obtain the individual device chips.

Wafer processing method

A laser beam is applied to the front side of a wafer along division lines, to form grooves having a depth corresponding to a finished thickness of device chips. Molding resin is laid on the front side of the wafer and embedded in the grooves. A protective member is attached to a front side of the molding resin, and a back side of the wafer is ground to expose the grooves and to expose the molding resin embedded in the grooves on the back side of the wafer. The wafer is divided along the grooves by a cutting blade having a thickness smaller than the width of the grooves, a central portion in a width direction of the molding resin being exposed along the grooves, thereby dividing the wafer into individual device chips each having a periphery surrounded with the molding resin.

A wafer processing method for dividing a wafer into individual device chips along division lines is disclosed. The wafer processing method includes a back grinding step of grinding the back side of the wafer in the condition where a protective tape is attached to the front side of the wafer, thereby reducing the thickness of the wafer to a predetermined thickness, and a reinforcing insulation seal mounting step of mounting a reinforcing insulation seal capable of transmitting infrared light on the back side of the wafer. The wafer processing method further includes a modified layer forming step of applying a laser beam along each division line to thereby form a modified layer inside the wafer along each division line and a wafer dividing step of applying an external force to the wafer to thereby divide the wafer into the individual device chips along each division line.

A wafer processing method for dividing a wafer (including a substrate and a functional layer formed on the front side of the substrate) along a plurality of division lines. The functional layer is partitioned by the division lines to define a plurality of regions. The method includes the following steps: attaching a protective member to the front side of the wafer; cutting the back side of the substrate of the wafer in an area corresponding to each division line with a cutting blade, thereby forming a division groove having a depth not reaching the functional layer so that a part of the substrate is left in this area; applying a laser beam to the wafer from the back side of the substrate along the bottom of each division groove extending along each division line to thereby cut the part of the substrate and the functional layer along each division line.

A method of processing a wafer having a device area where a plurality of devices are formed and a peripheral marginal area surrounding the device area on the front side of the wafer is disclosed. The devices are formed in regions defined by division lines. Each device has a plurality of bump electrodes on the front side. A first laser beam is applied through dicing tape from the back side along the boundary between the device area and the peripheral marginal area, with the focal point of the first laser beam set inside the wafer, thereby forming an annular modified layer inside the wafer. A second laser beam is applied through the dicing tape from the back side along each division line with the focal point of the second laser beam set inside the wafer, thereby forming a modified layer inside the wafer along each division line.

In a wafer processing method, the back side of the wafer is ground to reduce the thickness of the wafer to a predetermined thickness. A modified layer is formed by applying a laser beam to the wafer from the back side of the wafer along each division line with the focal point of the laser beam set inside the wafer. The wafer is mounted on a reinforcing sheet having an insulating function on the back side of the wafer and a dicing tape is attached to the reinforcing sheet. The peripheral portion of the dicing tape is supported by an annular frame. The wafer is heated, which also heats the reinforcing sheet, thereby hardening the reinforcing sheet. An external force is applied to the wafer to divide the wafer into individual devices along each division line and to also break the reinforcing sheet along the individual devices.

A method for applying a resin film to the face of a semiconductor wafer, comprising: an assembly holding step of holding an assembly on the surface of chuck means, with the back of the assembly being opposed to the surface of the chuck means, the assembly including a frame having a mounting opening formed in a central portion of the frame, and a semiconductor wafer mounted in the mounting opening of the frame by sticking a mounting tape to the back of the frame and the back of the semiconductor wafer; a liquid droplet supply step of supplying liquid droplets of a solution having a resin dissolved therein onto the face of the semiconductor wafer in the assembly after the assembly holding step; and a spreading step of rotating the chuck means subsequently to the liquid droplet supply step, thereby spreading the liquid droplets throughout the face of the semiconductor wafer. The method further comprises a cleaning step of rotating the chuck means and also supplying a cleaning fluid to the surface of the frame after the spreading step, thereby cleaning the solution which has adhered to the surface of the frame.

Method for applying resin film to face of semiconductor wafer

A laser processing method for a wafer such that a laser beam is applied to a work surface of the wafer along a separation line formed on the work surface to thereby form a laser processed groove along the separation line on the work surface by ablation. The laser processing method includes a protective material coating step for coating the work surface of the wafer with a liquid protective material mainly containing a water-soluble silicone oil and a laser processed groove forming step for applying the laser beam to the work surface coated with the protective material along the separation line in the condition that the protective material has fluidity, thereby forming the laser processed groove along the separation line.

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Tokyo, Japan

Yohei Yamashita