Murata Manufacturing Co., Ltd.

Yohei Yamaguchi

Tomoyuki Ashimine

Yasuhiro Murase

Seiji Hidaka

Stéphane Bouvier

Yukihiro Fujita

A multilayer ceramic capacitor includes a capacitor body, first and second via-conductors, first and second extended electrode portions, first and second outer electrodes, and an insulative resin. The capacitor body includes first and second inner electrodes. The first and second via-conductors are inside the capacitor body, and are respectively electrically connected to the first and second inner electrodes. The first and second extended electrode portions are respectively electrically connected to the first and second via-conductors. The first and second extended electrode portions are located on an outer surface of the capacitor body so as to extend to locations different from locations at which the first and second extended electrode portions are connected to the first and second via-conductors. The first and second outer electrodes are respectively electrically connected to the first and second extended electrode portions.

Multilayer ceramic capacitor including via-conductors and outer electrodes

RC-network components that include a substrate and capacitor having a thin-film top electrode portion at a surface on one side of the substrate. The low ohmic semiconductor substrate is doped to contribute 5% or less to the resistance of the RC-network component. The resistance provided in series with the capacitor is controlled by providing a contact plate, spaced from the thin-film top electrode portion by an insulating layer, and a set of one or more bridging contacts passing through openings in the insulating layer. The bridging contacts electrically interconnect the thin-film top electrode portion and the contact plate. Different resistance values can be set by appropriate selection of the number of bridging contacts. The openings are elongated thereby reducing temperature concentration at their periphery. Correspondingly, the bridging contacts have an elongated cross-sectional shape.

Contact structures in RC-network components

A semiconductor device that includes a semiconductor substrate having a first main surface and a second main surface; a dielectric film on the first main surface, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in a first outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion; a first electrode layer on the electrode layer disposing portion; a first protective layer covering a second outer peripheral end of the first electrode layer and at least a part of the protective layer covering portion; and a second protective layer covering the first protective layer, wherein the first protective layer has a relative permittivity lower than that of the second protective layer, and the second protective layer has moisture resistance higher than that of the first protective layer.

Semiconductor device

A semiconductor device that includes a semiconductor substrate having a first main face and a second main face opposite each other; a dielectric film on a part of the first main face, the dielectric film having an electrode layer disposing portion and a protective layer covering portion, and a thickness of the protective layer covering portion in an outer peripheral end of the dielectric film is smaller than a thickness of the electrode layer disposing portion of the dielectric film; a first electrode layer on the electrode layer disposing portion of the dielectric film; and a protective layer continuously covering a range from an end portion of the first electrode layer to the outer peripheral end of the dielectric film.

Growing community of inventors

Nagaokakyo, Japan

Yohei Yamaguchi