Renesas Technology Corp.

Yohei Yamada

Nobuhiro Konishi

In the forming process of buried wirings by filling wiring trenches formed in an insulator with a conductive film mainly made of Cu, the buried wirings are formed to have a uniform-height regardless of the width and density of the wiring trenches. When polishing a barrier conductor film comprised of a Ta film in the CMP process for forming the buried wirings, the polishing agent, which controls the removal rate of the underlying insulator of a silicon oxide film relative to the barrier conductor film to almost one twentieth or less, is used as the slurry, and the pad which is made of polyurethane with a hardness of 75 degrees or more measured by the Type E durometer in conformity with the JIS K6253 and which is comprised of the foam including non-uniform pores with a diameter of about 150 &#x3bc;m or larger and a density of about 0.4&#x2013;0.16 g/cm, is used as the polishing pad.

Manufacturing method of semiconductor integrated circuit device that includes chemically and mechanically polishing two conductive layers using two polishing pads that have different properties

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Kodaira, Japan

Yohei Yamada