Ebara Corporation

Yohei Wakuda

Yasuyuki Masuda

Masashi Shimoyama

Jumpei Fujikata

Shao Hua Chang

Masahi Shimoyama

In a plating apparatus including a shielding member, an ionically resistive element is disposed to be close to a surface to be plated of a substrate to improve uniformity of a distribution of plating film-thickness. A plating apparatus includes: a plating tankconfigured to house a plating solution; a substrate holderconfigured to hold a substrate Wf with a surface to be plated Wf-a facing downward; an anodedisposed in the plating tank; an ionically resistive elementdisposed between the substrate Wf and the anodeand including an opposed surface-opposed to the surface to be plated Wf-a, the opposed surface-including a first opposed surface-and a second opposed surface-apart from the surface to be plated Wf-a more than the first opposed surface-; and a shielding memberdisposed in a depressed region β of the ionically resistive element, the depressed region β being formed by the second opposed surface-. The shielding memberis for shielding an electric field.

Plating apparatus

A paddle for agitating a plating solution by reciprocating parallel to a surface of a substrate is disclosed. The paddle includes a plurality of vertically-extending agitation rods. Each agitation rod includes: a planar portion perpendicular to a reciprocating direction of the paddle; two slope surfaces extending from side ends of the planar portion in directions closer to each other, the two slope surfaces being symmetric with respect to a center line of the agitation rod, the center line being perpendicular to the planar portion; and a tip portion connected with the two slope surfaces.

Paddle, plating apparatus equipped with the paddle, and plating method

A plating method which can achieve a desired dome height is disclosed. The method includes: preparing correlation data showing a relationship between proportion of dome height to bump height and concentration of chloride ions; producing a plating solution containing chloride ions at a concentration which has been selected based on a desired proportion of dome height to bump height and on the correlation data, the selected concentration being in a range of 100 mg/dmto 300 mg/dm; immersing a substrate in the plating solution; and passing an electric current between an anode and the substrate, both immersed in the plating solution, thereby plating the substrate to form bumps.

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Tokyo, Japan

Yohei Wakuda