Nichia Corporation

Yohei Wakai

Junya Narita

Yoshiki Inoue

Katsuyoshi Kadan

Takuya Okada

Naoya Sako

Motokazu Yamada

Shunsuke Minato

Yukio Narukawa

Hiroaki Matsumura

Kenji Oka

Masahiko Onishi

Takao Yamada

Takayoshi Wakaki

Takashi Ichihara

Kazuto Okamoto

Hirofumi Yoshida

Mizuki Nishioka

A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.

Semiconductor light emitting device having a recess with irregularities

A method of manufacturing a nitride semiconductor element includes preparing a wafer having a nitride semiconductor layer which includes p-type dopants, forming an altered portion by condensing laser beam on the wafer, and after the forming an altered portion, forming a p-type nitride semiconductor layer by subjecting the wafer to annealing.

Method of manufacturing nitride semiconductor element

The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections.

Sapphire substrate having elongated projection and semiconductor light emitting device utilizing the same

Semiconductor light emitting device with light extraction surface

A semiconductor light emitting device having high reliability and excellent light distribution characteristics can be provided with an n-electrode arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stack is mounted on a substrate. A plurality of convexes are arranged on a first convex region and a second convex region on the light extraction surface. The second convex region adjoins the interface between the n-electrode and the semiconductor stack, between the first convex region and the n-electrode. The base end of the first convex arranged in the first convex region is positioned closer to a light emitting layer than the interface between the n-electrode and the semiconductor stack, and the base end of the second convex arranged in the second convex region is positioned closer to the interface between the n-electrode and the semiconductor stack than the base end of the first convex.

Method for manufacturing semiconductor light emitting device

LED sapphire substrate with groups of three projections on the surface

A light emitting element having a recess-protrusion structure on a substrate is provided. A semiconductor light emitting elementhas a light emitting structure of a semiconductoron a first main surface of a substrate. The first main surface of the substratehas substrate protrusion portion, the bottom surfaceof each protrusion is wider than the top surfacethereof in a cross-section, or the top surfaceis included in the bottom surfacein a top view of the substrate. The bottom surfacehas an approximately polygonal shape, and the top surfacehas an approximately circular or polygonal shape with more sides than that of the bottom surface

Method for manufacturing substrate for semiconductor light emitting element and semiconductor light emitting element using the same

Sapphire substrate having triangular projections with portions extending in direction of substrate crystal axis

A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of &#xb1;10 degrees of a direction that is rotated counter-clockwise by 30 degrees from a crystal axis 'a' of the sapphire substrate.

Sapphire substrate having triangular projections with bottom sides formed of outwardly curved lines

A sapphire substrate having a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device comprises a plurality of projections on the principal surface. Each of the projections has a bottom that has a substantially polygonal shape. Each side of the bottom of the projections has a depression in its center. Vertexes of the bottoms of the respective projections extend in a direction that is within a range of &#xb1;10 degrees of a direction that is rotated clockwise by 30 degrees from a crystal axis 'a' of the sapphire substrate.

Sapphire substrate having triangular projections with outer perimeter formed of continuous curve

A sapphire substrate having one principal surface on which a nitride semiconductor is grown, said one principal surface having a plurality of projections. Each of the projections has a generally pyramidal shape with a not truncated, more sharpened tip and with an inclined surface composed of a crystal growth-suppression surface that lessens or suppresses the growth of the nitride semiconductor and also which has an inclination change line at which an inclination angle discontinuously varies.

Sapphire substrate and nitride semiconductor light emitting device

A semiconductor light emitting device having high reliability and excellent light distribution characteristics is provided. Specifically, a semiconductor light emitting deviceis provided with an n-electrode, which is arranged on a light extraction surface on the side opposite to the surface whereupon a semiconductor stackis mounted on a substrate. A plurality of convexes are arranged on a first convex regionand a second convex regionon the light extraction surface. The second convex regionadjoins to the interface between the n-electrodeand the semiconductor stack, between the first convex regionand the n-electrode. The base end of the first convex arranged in the first convex regionis positioned closer to alight emitting layerthan the interface between the n-electrodeand the semiconductor stack, and the base end of the second convex arranged in the second convex regionis positioned closer to the interface between the n-electrodeand the semiconductor stackthan the base end of the first convex.

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Anan, Japan

Yohei Wakai