Ulvac, Inc.

Yohei Uchida

Takeshi Masuda

Shinya Nakamura

Koukou Suu

Yasushi Higuchi

Masahiko Kajinuma

Yoshihiro Ikeda

Junichi Hamaguchi

Kazuyoshi Hashimoto

Shuji Kodaira

Yuta Sakamoto

Takuya Ideno

Nobuhiro Odajima

Youhei Endo

Hiroaki Iwasawa

A thin film manufacturing method and a thin film manufacturing apparatus are provided to manufacture a thin film with good reproducibility. A dummy substrate is conveyed into a chamber, and a dummy processing gas is supplied to the dummy substrate. Moreover, a product substrate is conveyed into the chamber, and a raw material gas different from the dummy processing gas is supplied to the product substrate. The raw material gas contains metal material for manufacturing a thin film with a metal organic chemical vapor deposition (MOCVD) method. Since the raw material gas is not used as a dummy processing gas, the amount of metal material to be used can be minimized in manufacturing the thin film with good reproducibility.

Thin-film forming method and thin-film forming apparatus

A manufacturing method of a device including: a first process in which a barrier film is formed on a substrate with a concave portion provided on one surface thereof so as to cover an inner wall surface of the concave portion; a second process in which a conductive film is formed so as to cover the barrier film; and a third process in which the conductive film is melted by a reflow method, wherein the method includes a process &#x3b1; between the second process and the third process, in which the substrate with the barrier film and the conductive film laminated thereon in this order is exposed to an atmosphere under a pressure A for a time period B, and wherein in the process &#x3b1;, control is carried out such that a product of the pressure A and the time period B is not greater than 6&#xd7;10[Pa&#xb7;s].

Manufacturing method and manufacturing apparatus of device

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Shizuoka, Japan

Yohei Uchida