Hitachi, Ltd.

Hitachi Construction Machinery Co., Ltd.

Yohei Tanno

Hiroyuki Ohta

Hiromi Shimazu

Kenji Araki

Yoshihisa Kiyotoki

Tomohiro Naruse

Mari Uchida

Takeshi Kazama

Takayuki Shimodaira

Ryuji Takada

Yuuki Shimizu

Ryuhei Tsukahara

Kenji Onodera

Naoto Saito

Personal dependency related to fault tree construction is reduced, and the reliability of an operating machine is improved by improving the accuracy of a fault diagnosis. The present invention provides a fault diagnosis device for a machine in operation, the device comprising: an abnormality degree analysis unit that calculates the abnormality degree of each component configuring the machine by comparing input/output data of the machine with a threshold value; a fault tree automatic generation unit that holds a fault tree of each component in which the fault of each component and the fault of a sensor in each component are associated with each other and generates the fault tree of the entire machine by coupling the fault trees of the components on the basis of a correlation between the input/output data of each component; a fault analysis unit that analyzes the fault of the machine on the basis of the abnormality degree and information of the fault tree of the entire machine; and a display unit that displays information analyzed by the fault analysis unit and issues an alarm.

Fault diagnosis device, fault diagnosis method and machine to which fault diagnosis device is applied

A casing of a turbo machine includes a casing body having an inner space; an intake nozzle which is disposed on the casing body and through which a fluid is taken into the casing body; and a straightening vane disposed in the intake nozzle and having opposite ends located in a diameter direction of the intake nozzle. Only one of the opposite ends of the straightening vane is joined to an inner surface of the intake nozzle.

Casing and turbo machine

A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a &#x3c;100&#x3e; direction of the semiconductor monocryastal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a &#x3c;110&#x3e; direction.

Mechanical-quantity measuring device

A strain measuring device includes a bridge circuit comprising a p-type impurity diffused resistor as a strain detecting portion and a bridge circuit comprising an n-type impurity diffused resistor as a strain detecting portion in a semiconductor single crystalline substrate, Sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, the impurity diffused resistor is configured to be a meander shape including strip lines and connecting portions.

Strain measuring device

A mechanical-quantity measuring device capable of measuring a strain component in a specific direction with high precision is provided. At least two or more pairs of bridge circuits are formed inside a semiconductor monocrystal substrate and a semiconductor chip, and one of these bridge circuits forms a n-type diffusion resistor in which a direction of a current flow and measuring variation of a resistor value are in parallel with a &#x3c;100&#x3e; direction of the semiconductor monocrystal silicon substrate, and an another bridge circuit is composed of combination of p-type diffusion resistors in parallel with a &#x3c;110&#x3e; direction.

A strain measuring device according to the present invention includes a bridged circuit comprising a p-type impurity diffused resistor as a strain detective portion and a bridged circuit comprising an n-type impurity diffused resistor as a strain detective portion in a semiconductor single crystalline substrate, and sheet resistance of the p-type impurity diffused resistor is 1.67 to 5 times higher than that of the n-type impurity diffused resistor. Furthermore, it is preferable that the impurity diffused resistor be configured to be a meander shape comprising strip lines and connecting portions. Moreover, it is preferable that the number of strip lines in the p-type impurity diffused resistor be smaller than that in the n-type impurity diffused resistor.

In a solidification sensor for measuring a solidification state of a liquid with a high degree of accuracy in real time, and for making the sensor small-sized with a reduced power consumption, the solidification sensor comprises a liquid absorbing portion formed of a liquid absorbable material, a substrate coupled to the liquid absorbing portion and a strain sensor for measuring strain exerted to the substrate due to a volumetric change upon solidification of a liquid absorbed in the liquid absorbing portion.

Solidification sensor

The invention provides a load sensor which is driven by a low electric power consumption, can measure at a high precision, and has a high reliability without being broken. The load sensor is structured such that a detection rod for detecting a strain is provided in an inner portion of a hole formed near a center of a pin via a shock relaxation material and a semiconductor strain sensor is provided in the detection rod, in a load sensor detecting a load applied to the pin from a strain generated in an inner portion of the pin.

Load sensor with shock relaxation material to protect semiconductor strain sensor

A monitoring system for valve device according to the present invention comprises a semiconductor single crystalline substrate including a bridged circuit and the bridged circuit comprising impurity-diffused resistors. The semiconductor single crystalline substrate is mounted to any of a valve device's valve stem, valve yoke, drive shaft, or elastic body disposed at the end of the drive shaft. Thrust and torque of the valve device are measured by the semiconductor single crystalline substrate and then the measured values are used for monitoring the valve device.

Growing community of inventors

Hitachinaka, Japan

Yohei Tanno