Fujitsu Corporation

Hitachi Cable Co., Ltd.

Sumitomo Chemical Company, Limited

Hitachi Cable, Inc.

Yohei Otoki

Takeshi Tanaka

Yoshihiko Moriya

Toshihide Kikkawa

Kenji Imanishi

Fumimasa Horikiri

Masae Sahara

Kaori Kurihara

An electrochemical sensor unit including: a working electrode; and a counter electrode, wherein the working electrode includes a diamond film which generates a redox reaction on a surface when a voltage is applied between the working electrode and the counter electrode, and a support which is formed of a material different from diamond and supports the diamond film, when the working electrode is viewed laterally, in the support, a width of a surface opposite to a surface in contact with the diamond film is smaller than a width of the diamond film, and a liquid test sample is supplied to the working electrode from the diamond film side.

Electrochemical sensor unit, electrode for electrochemical sensor, and method of manufacturing electrode for electrochemical sensor

A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

Compound semiconductor device including aln layer of controlled skewness

Compound semiconductor device including AIN layer of controlled skewness

A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

A nitride semiconductor epitaxial wafer includes a growth substrate including a surface for growing a nitride semiconductor thereon, a first structure layer formed on the growth substrate, a dislocation propagation direction changing layer formed on the first structure layer for changing a propagation direction of a dislocation propagated in the first structure layer into a lateral direction, a second structure layer formed on the dislocation propagation direction changing layer, and a buffer layer formed on the second structure layer for changing a propagation direction of a dislocation propagated in the second structure layer.

Nitride semiconductor epitaxial wafer and nitride semiconductor device

Growing community of inventors

Hitachi, Japan

Yohei Otoki