Hitachi High-tech Corporation

Hitachi, Ltd.

Oji Holdings Corporation

Fujifilm Healthcare Corporation

Canon Kabushiki Kaisha

Yohei Nakamura

Kazuhiro Yamada

Junichi Tanaka

Yoshiyuki Nakagawa

Yasuyuki Tamura

Natsuki Tsuno

Muneyuki Fukuda

Heita Kimizuka

Taizo Yamawaki

Mitsuhiro Nakamura

Toru Nakakubo

Takashi Oshima

Naozumi Nabeshima

Toshio Suzuki

Takafumi Miwa

Yutaka Igarashi

Shinya Kajiyama

Masahiro Sasajima

Yasuhiro Shirasaki

Toshihide Agemura

Yasuto Kodera

Satoshi Takada

Daisuke Bizen

Kengo Imagawa

Minami Shouji

Kazuhiro Amino

Takayuki Iwashita

Masayo Maeda

Junya Kojima

Aiko Gondo

Tatsuo Nakagawa

Yusaku Katsube

Takahide Terada

Naoto Sasagawa

Tsutomu Saito

Takuma Nishimoto

Yasuyuki Okuma

Ryota Kashu

Ryoko Araki

Katsura Takaguchi

Hironori Itabashi

Hirofumi Satou

Shota Mitsugi

Junichi Fuse

A charged particle optical system scans a sample with a pulsed charged particle beam and detects secondary charged particles; and a scan image is formed. Control is carried out so that a deflection signal for deflecting the charged particle beam in a first direction, a first timing for pulsed irradiation, a second timing for pulsed irradiation, and a third timing for detection of the secondary charged particles are synchronized. When the deflection amount of the charged particle beam in the time period of the first timing corresponds to the coordinates of n pixels in the scan image, the same line is scanned m times (m<n) while shifting the first timing with respect to the deflection signal so that a location irradiated with the charged particle beam by each scanning has different pixel coordinates. The pixel values at pixel coordinates where a signal is defective are restored.

Charged particle beam device and sample observation method

An object of the present disclosure is to provide a system for deriving a type of defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step), and derives (Step) a type of a defect by referring to (Step) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

System for deriving electrical characteristics and non-transitory computer-readable medium

A control device controls a contact probe in synchronization with a pulse-controlled light having a predetermined wavelength, a measurement instrument measures a characteristic of a sample to be inspected or an analysis sample, and a circuit constant or a defect structure of the sample to be inspected is estimated based on a circuit model created by an electric characteristic analysis device configured to generate the circuit model based on a value measured by the measurement instrument and a detection signal of secondary electrons detected by the charged particle beam device.

Inspection method

A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

Charged particle beam apparatus

An object of the present disclosure is to provide a system for deriving a type of a defect of a semiconductor element and a non-transitory computer-readable medium. The system receives, from the image acquisition tool, image data obtained by sequentially irradiating a plurality of patterns provided on the semiconductor wafer with a beam and extracts characteristics of the plurality of patterns sequentially irradiated with a beam from the received image data, the characteristics being included in the image data, or receives characteristics of the plurality of patterns sequentially irradiated with a beam from the image acquisition tool, the characteristics being extracted from the image data (Step), and derives (Step) a type of a defect by referring to (Step) related information for the characteristics of the plurality of patterns, the related information storing the characteristics of the plurality of patterns and types of defects in association with each other.

A charged particle beam apparatus includes a database that stores a to-be-used-in-calculation device model for use in estimation of a circuit of a sample and an optical condition under which a charged particle beam is applied to the sample, a charged particle beam optical system that controls the beam applied to the sample under the optical condition, a detector that detects secondary electrons emitted from the sample excited by the application of the beam and outputs a detection signal based on the secondary electrons, and a computing unit that generates a to-be-used-in-computation netlist based on the to-be-used-in-calculation device model, estimates a first application result when the beam is applied to the sample based on the to-be-used-in-computation netlist and the optical condition, and compares the first application result with a second application result when the beam is applied to the sample based on the optical condition.

A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

Device defect detection method using a charged particle beam

An object of the invention is to provide a charged particle beam device capable of specifying an irradiation position of light on a sample when there is no mechanism for forming an image of backscattered electrons. The charged particle beam device according to the invention determines whether an irradiation position of a primary charged particle beam and an irradiation position of light match based on a difference between a first observation image acquired when the sample is irradiated with only the primary charged particle beam and a second observation image acquired when sample is irradiated with the light in addition to the primary charged particle beam. It is determined whether the irradiation position of the primary charged particle beam and the irradiation position of the light match using the first observation image and a measurement result by a light amount measuring device.

Charged particle beam device

Provided is a probe which transmits an ultrasonic wave to a diagnostic site and receives a reception signal which is a reflected wave. The probe includes: a plurality of transducers; a plurality of low-noise amplifying circuits respectively corresponding to the plurality of transducers; and a single differential converter which converts a control signal rising with the elapse of time to a first bias signal rising with the elapse of time and a second bias signal falling with the elapse of time to control the plurality of low-noise amplifying circuits, and the low-noise amplifying circuit includes: an attenuator which attenuates an electric signal from the transducer; a first amplifying circuit which sets the first bias signal as a bias and amplifies an output signal of the attenuator to be gradually increased with the elapse of time; a second amplifying circuit which sets the second bias signal as a bias and amplifies the output signal of the attenuator to be gradually reduced with the elapse of time; and a subtractor which subtracts an output of the first amplifying circuit and an output of the second amplifying circuit.

Ultrasonic diagnostic apparatus and probe used for the same

A charged particle beam device includes an input and output device that receives, as inputs, a charged particle beam condition, a light condition, and electronic device circuit information, a charged particle beam control system that controls a charged particle beam applied to a sample based on the electron beam condition, a light control system that controls light applied to the sample based on the light condition, a detector that detects second electrons emitted from the sample by the application of the charged particle beam and the light and outputs a detection signal, and a calculator that generates a calculation netlist based on the electronic device circuit information, generates a light irradiation netlist based on the calculation netlist and the light condition, estimates a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and compares the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam condition.

Provided is a charged particle beam apparatus capable of estimating an internal device structure of a sample. The charged particle beam apparatus includes an electron beam optical system, a detector, and a calculator. The electron beam optical system irradiates a plurality of irradiation points on a sample, which are different in position or time, with an electron beam. The detector detects electrons emitted from the sample in response to irradiation of the electron beam by the electron beam optical system. The calculator calculates a dependence relationship between the irradiation points based on the electrons detected by the detector at the plurality of irradiation points.

Provided is a probe which transmits an ultrasonic wave to a diagnostic site and receives a reception signal which is a reflected wave. The probe includes: a plurality of transducers; a plurality of low-noise amplifying circuits respectively corresponding to the plurality of transducers; and a single differential converter which converts a control signal rising with the elapse of time to a first bias signal rising with the elapse of time and a second bias signal falling with the elapse of time to control the plurality of low-noise amplifying circuits, and the low-noise amplifying circuit includes an attenuator which attenuates: an electric signal from the transducer; a first amplifying circuit which sets the first bias signal as a bias and amplifies an output signal of the attenuator to be gradually increased with the elapse of time; a second amplifying circuit which sets the second bias signal as a bias and amplifies the output signal of the attenuator to be gradually reduced with the elapse of time; and a subtractor which subtracts an output of the first amplifying circuit and an output of the second amplifying circuit.

Provided are a charged particle beam apparatus and a charged particle beam inspection system capable of estimating electrical characteristics of a sample including capacitance characteristics. The charged particle beam apparatus estimates electrical characteristics of the sample using the correspondence data representing the correspondence between the node of the netlist and the coordinate on the sample and the pulsing condition when the sample is irradiated with the charged particle beam in a pulsed manner. The charged particle beam optical system irradiates a predetermined coordinate on the sample with a charged particle beam based on a pulsing condition, and the detector actually measures an emission amount of electrons. The emission amount calculation unit calculates, for the node on the netlist corresponding to a predetermined coordinate, an emission amount of electrons according to a temporal change in a charged state accompanying the irradiation of the charged particle beam based on the pulsing condition. The comparator compares a measurement result by the detector with a calculation result by the emission amount calculation unit.

Charged particle beam apparatus and charged particle beam inspection system

Growing community of inventors

Tokyo, Japan

Yohei Nakamura