Mitsubishi Electric Corporation

Yohei Mitsui

Yasutaka Imamura

Takeshi Horiguchi

Junichi Nakashima

Yasushige Mukunoki

A semiconductor device includes a power switching element and a drive device to drive the power switching element. The drive device includes a voltage source, a switching element, a capacitor connected in parallel to the voltage source with the switching element being interposed, a switching element provided between the capacitor and a gate terminal of the power switching element, a first comparison device to output a result of comparison between a voltage of the capacitor and a reference value VQR, a second comparison device to output a result of comparison between a gate voltage of the power switching element and a reference value VR, and a short-circuit determination unit that makes determination as to a short circuit of the power switching element based on an output signal from the first comparison device and an output signal from the second comparison device.

Drive device to drive semiconductor element, semiconductor device, and power conversion device

A semiconductor drive device includes a drive circuit that drives a semiconductor switching element, a passive element connected to a gate of the semiconductor switching element to prevent a gate current of the semiconductor switching element, a switching element connected in series to the passive element, a control circuit that controls the switching element, and a temperature detection circuit that detects a temperature of the semiconductor switching element. The control circuit controls the switching element such that when the temperature detected by the temperature detection circuit is high, the gate current is prevented more than when the temperature is low.

Growing community of inventors

Tokyo, Japan

Yohei Mitsui