Showa Denko K.k.

Resonac Corporation

Denso Corporation

Yohei Fujikawa

Hideyuki Uehigashi

Yoshishige Okuno

Shunsuke Noguchi

Rimpei Kindaichi

Yoshiteru Hosaka

Hidetaka Takaba

According to the invention, a SiC single crystal growth crucible includes: a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of the raw material accommodation portion, in which the raw material accommodation portion has a tapered portion, an inner surface of which is tapered off downward.

SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus

A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the <1-100> direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the <11-20> direction that passes through the center of view and is perpendicular to the <1-100> direction is 60 μm or less.

SiC single crystal, method of manufacturing SiC ingot, and method of manufacturing SiC wafer

The present invention provides a single crystal growth crucible and a single crystal growth method which can suppress the recrystallization of the raw material gas which has been sublimated on the surface of the raw material and can suppress the generation of different polytypes in single crystal growth. The single crystal growth crucible includes an inner bottom, a crystal mounting part, and a deposition preventing member, wherein a raw material is provided in the inner bottom, the crystal mounting part faces the inner bottom, the deposition preventing member has a first surface comprising metal carbide, a first surface is disposed to face the crystal mounting part, the deposition preventing member is disposed in a central area of the inner bottom in a plan view from the crystal mounting part, and the first surface is disposed in accordance with the position of the surface of the raw material.

Single crystal growth crucible and single crystal growth method

In a method of producing a SiC single crystal ingot of the present invention, in a lower part of a crucible, a high thermal conductivity raw material layer containing a high thermal conductivity raw material and a low thermal conductivity raw material layer containing a low thermal conductivity raw material in at least one of a position above or below the high thermal conductivity raw material layer are disposed to form a raw material part, and heating is performed so that the raw material part reaches the maximum temperature in the high thermal conductivity raw material layer and a SiC single crystal ingot is grown.

Method of producing SiC single crystal ingot

The present invention provides a crucible and a SiC single crystal growth apparatus capable of improving the efficiency of using source materials. The crucible includes a lid and a container. The container includes a bottom facing the lid. The bottom includes a recess which is recessed towards the lid.

Crucible and SiC single crystal growth apparatus

A SiC single crystal composite includes: a central portion positioned at a center in plan view; and an outer circumferential portion surrounding an outer circumference of the central portion, in which crystal planes of the central portion and the outer circumferential portion are inclined to each other or different from each other, a boundary is present between the central portion and the outer circumferential portion, and a direction of a crystal constituting the central portion and a direction of a crystal constituting the outer circumferential portion are different from each other via the boundary.

SiC single crystal composite and SiC ingot

A SiC ingot includes a core portion; and a surface layer that is formed on a plane of the core portion in a growing direction, and a coefficient of linear thermal expansion of the surface layer is smaller than a coefficient of linear thermal expansion of the core portion.

SiC ingot and method of manufacturing SiC ingot

A crystal growth apparatus according to the present embodiment includes a crucible, a heater which is installed on an outward side of the crucible and surrounds the crucible, and a coil which is installed on an outward side of the heater and surrounds the heater, in which an inner surface of the heater on the crucible side includes a first region, and a second region which is further away from an outer side surface of the crucible than the first region is.

Crystal growth apparatus including heater with multiple regions and crystal growth method therefor

The present invention provides a heat-insulating shield member, wherein the heat-insulating shield member is arranged and used between a SiC source housing () and a substrate support () in a single crystal manufacturing apparatus (), wherein the single crystal manufacturing apparatus () comprises a crystal growth container () and a heating member () arranged on an outer periphery of the crystal growth container (), wherein the crystal growth container () includes the SiC source housing () disposed at a lower portion of the apparatus, and the substrate support () which is arranged above the SiC source housing () and supports a substrate (S) used for crystal growth so as to face the SiC source housing (), and wherein the single crystal manufacturing apparatus () is configured to grow a single crystal (W) from a SiC source (M) on the substrate (S) by sublimating the SiC source (M) from the SiC source housing ().

Heat-insulating shield member and single crystal manufacturing apparatus having the same

A thermal conductivity measuring device includes a sample container that has a plurality of storage sections; a drive unit that is configured to move the plurality of storage sections of the sample container; and a radiation thermometer that is configured to measure the temperature of a predetermined position of the sample container.

Thermal conductivity measuring device, heating device, thermal conductivity measuring method, and quality assurance method

A SiC single crystal manufacturing apparatus of the present invention includes a growth container having a growth space in which a SiC single crystal is grown in a first direction and a heat insulating material which covers the growth container and includes a plurality of units, and the plurality of units include a first unit and a second unit having at least a thermal conductivity different from that of the first unit, and the first unit includes a container made of at least one of graphite and a metal carbide and a filler filled into the container in a replaceable manner.

SiC single crystal manufacturing apparatus and structure having container and filler for manufacturing SiC single crystal

Provided is a single crystal growth crucible including a first housing and a second housing, in which a fitting portion between the first housing and the second housing has a first protruding portion, which is provided by protruding inner wall side of the first housing toward the second housing, and a second protruding portion, which is provided by protruding outer wall side of the second housing toward the first housing and covers an outer circumferential surface of the first protruding portion, the first protruding portion is formed such that an outer diameter of a tip portion thereof is larger than that of a base portion thereof in the protruding direction, and the second protruding portion is formed such that an inner diameter of a tip portion thereof is smaller than that of a base portion thereof in the protruding direction, the outer diameter of the tip portion of the first protruding portion is equal to or smaller than the inner diameter of the tip portion of the second protruding portion at room temperature, and the outer diameter of the tip portion of the first protruding portion is larger than the inner diameter of the tip portion of the second protruding portion at a single crystal growth temperature.

Single crystal growth crucible having a first housing and a second housing, and single crystal production device

A SiC single crystal manufacturing apparatus of the present invention is a SiC single crystal manufacturing apparatus that manufactures a SiC single crystal by performing crystal growth on a growth surface of a seed crystal disposed inside a crucible, and the crucibleis able to accommodate a raw material M for a SiC single crystal therein, and includes a crucible lower portionA and a crucible upper portionB, the crucible lower portion including a bottom portionAa and a side portionAb, and the crucible upper portion including a top portionBa provided with a seed crystal installation portionBc for installing a seed crystal SD and a side portionBb. A male threadAAa is provided at an outer circumferenceAA of the side portionAb of the crucible lower portionA, a female threadBBa engaging with the male thread is provided at an inner circumferenceBB of the side portionBb of the crucible upper portionB, and the crucible includes a rotation mechanismthat is configured to relatively move the crucible upper portionB and the crucible lower portionA in a vertical direction by rotating at least one of the crucible upper portionB and the crucible lower portionA.

SiC single crystal manufacturing apparatus and SiC single crystal manufacturing method

A shielding member placed between a SiC source loading portion and a crystal installation portion in an apparatus for single crystal growth, including a crystal growth container including the loading portion which accommodates a SiC source in an inner bottom portion; a crystal installation portion facing the loading portion, and a heating unit configured to heat the crystal growth container. The device grows a single crystal of the SiC source on a crystal installed on the crystal installation portion by sublimating the SiC source from the loading portion. The shielding member includes a plurality of shielding plates, wherein each area of the plurality of shielding plates is 40% or less of a base area of the crystal growth container. When the SiC source loading portion is filled with a SiC source, a shielding ratio provided by a projection surface of the plurality of shielding plates is 0.5 or more.

Shielding member and apparatus for single crystal growth

The present invention provides a single crystal growth method capable of suppressing the recrystallization of the raw material gas subjected to sublimation on the surface of the raw material, and suppressing the generation of different polytypes in the crystal growing single crystal. The single crystal growth method is carried out in a crucible comprising an inner bottom for providing a raw material and a crystal mounting part facing the inner bottom. The method comprises in the following order: providing the raw material in the inner bottom; covering at least a part of a surface of the raw material with a metal carbide powder in a plan view from the crystal mounting part; and growing a single crystal disposed in the crystal mounting part by sublimating the raw material by heating.

Growing community of inventors

Hikone, Japan

Yohei Fujikawa