Sumitomo Electric Industries, Limited

Sony Corporation

Other

Yohei Enya

Takashi Kyono

Masaki Ueno

Yusuke Yoshizumi

Takamichi Sumitomo

Katsushi Akita

Takao Nakamura

Masahiro Adachi

Shinji Tokuyama

Takatoshi Ikegami

Hiromi Nakanishi

Koji Katayama

Katsunori Yanashima

Hiroshi Nakajima

Kunihiko Tasai

Tetsuya Kumano

Shimpei Takagi

Fumitake Nakanishi

Shinya Ito

Kuniaki Ishihara

Noriyuki Futagawa

Hideyuki Ijiri

Keiji Ishibashi

Takashi Matsuura

Tatsushi Hamaguchi

Masato Furukawa

Kei Fujii

Kazuhide Sumiyoshi

Nobuhiro Saga

Hideki Osada

Yuji Furushima

Koji Nishizuka

Takumi Yonemura

Takahisa Yoshida

Yuki Nakamura

An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a laser diode, a first MEMS including a first mirror having a first reflective surface that reflects and scans light from the laser diode, the first mirror oscillating to form a first plane, and a second MEMS including a second mirror having a second reflective surface that reflects and scans light from the first mirror, the second mirror oscillating to form a second plane orthogonal to the first plane.

Optical module

A laser module includes a base, a carrier mounted on the base, a laser diode mounted on the carrier, an organic adhesive layer provided between the laser diode and the carrier, the organic adhesive layer having an exposed portion exposed between the laser diode and the carrier, a cap fixed to the base, the cap covering the carrier, the laser diode, and the organic adhesive layer, and a cover material covering at least a part of the exposed portion of the organic adhesive layer.

Laser module

An optical module includes a light-forming unit to form light. The light-forming unit includes a base member having an electronic temperature control module, a base plate, a plurality of submounts, and a microelectromechanical system (MEMS) base. The light-forming unit also includes a plurality of laser diodes arranged on the submounts, a filter arranged on the base plate and located to receive the light emitted from the plurality of laser diodes and multiplex the emitted light, a MEMS arranged on the MEMS base and located to receive the light multiplexed by the filter. The MEMS includes a scanning mirror to scan the light multiplexed by the filter, and the electronic temperature control module regulates a temperature range of the MEMS. The light-forming unit also includes a protective member surrounding and sealing the light-forming unit, which includes a base body and a lid welded to the base body.

A mirror driving mechanism includes a plate-shaped base portion, a mirror that is installed at the base portion, and a temperature detecting section that is installed at the base portion and that detects a temperature of the base portion. The base portion includes a thin portion that is disposed away from an outer edge of the base portion and that has a through hole extending through the base portion in a plate-thickness direction of the base portion, a thick portion that is connected to the thin portion, that is thicker than the thin portion in the plate-thickness direction of the base portion, and that extends along the outer edge so as to surround the thin portion, and a first shaft portion extends into the through hole from an outer periphery of the through hole.

Mirror driving mechanism and optical module

An optical module includes a light-forming unit configured to form light, and a protective member surrounding and sealing the light-forming unit. The light-forming unit includes a base member including an electronic temperature control module, a plurality of laser diodes arranged on the base member, a filter arranged on the base member and configured to multiplex light from the plurality of laser diodes, a beam shaping portion arranged on the base member and configured to convert a beam shape of the light multiplexed by the filter, and a MEMS arranged on the base member and including a scanning mirror configured to scan the light shaped in the beam shaping portion. The protective member includes a base body, and a lid welded to the base body.

An optical module includes a first semiconductor light-emitting element, a second semiconductor light-emitting element, a first lens, a second lens, a filter that multiplexes the first light and the second light, a base plate that has a first surface on which the first semiconductor light-emitting element, the second semiconductor light-emitting element, the first lens, the second lens, and the filter are mounted and a second surface opposite the first surface in a thickness direction, and a support base that is in contact with a part of the second surface and that supports the base plate. The base plate has a filter mounting region in which the filter is mounted. The optical module has a gap between a region of the second surface corresponding to the filter mounting region and the support base.

An optical module includes a first base member, a second base member disposed spatially away from the first base member, a first laser disposed on the first base member and configured to emit red light, a second laser disposed on the second base member and configured to emit light with a color other than red, and a first electronic cooling module disposed in contact with the first base member and configured to adjust a temperature of the first laser.

An optical module control method is a method for controlling an optical module that includes a semiconductor light emitting element and an electronic cooling module configured to adjust a temperature of the semiconductor light emitting element. The optical module control method includes a step of detecting a temperature of a light emitting unit including the semiconductor light emitting element, and outputting temperature information of the semiconductor light emitting element; a step of detecting an environmental temperature and outputting temperature information of the environmental temperature, the environmental temperature being a temperature of environment where the light emitting unit is placed; and a step of controlling an output of the electronic cooling module on the basis of the temperature information of the semiconductor light emitting element and the temperature information of the environmental temperature, and adjusting the temperature of the light emitting unit.

Optical module control method, optical module unit, and optical module

An optical module includes a semiconductor laser and a linear polarizer that is disposed in an emission direction of the semiconductor laser and that is configured to transmit, of light emitted by the semiconductor laser, only light containing a linearly polarized light component in a specific direction.

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more than 550 nm. The package has an internal moisture content of not more than 3000 ppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

Optical module and method for manufacturing the optical module

An optical module includes a light-forming part and a protective member. The light-forming part includes a base member, a semiconductor light-emitting device, a lens, and a light-receiving device mounted on the base member and disposed, in the emission direction of the semiconductor light-emitting device, between the semiconductor light-emitting device and the lens. The light-receiving surface of the light-receiving device inclines toward the emission portion of the semiconductor light-emitting device such that an inclination angle &#x3b8; is more than 0&#xb0; and 90&#xb0; or less, the inclination angle &#x3b8; being an angle formed between the optical axis of the semiconductor light-emitting device and a plane including the light-receiving surface of the light-receiving device.

Optical module that suppresses stray light

An optical moduleaccording to an embodiment includes a plurality of laser diodes (LDs)to, a multiplexing optical systemcombining a plurality of laser beams from the respective plurality of LDs, and a packageaccommodating the plurality of LDs and the multiplexing optical system. The package includes a support mounted with the plurality of LDs and the multiplexing optical system, and a cap having a transmissive window that allows a resultant light beam to pass through. At least one of the LDs has an oscillation wavelength of nor more thannm. The package has an internal moisture content of not more thanppm. The multiplexing optical system is fixed to the support by a resin curing adhesive.

A Group III nitride semiconductor device comprises: a Group III nitride semiconductor layer having a primary surface, inclined with respect to a c-plane of the Group III nitride semiconductor at an angle in a range of 50 degrees or more and 80 degrees or less, of a Group III nitride semiconductor; a p-type Group III nitride semiconductor laminate including first to third p-type Group III nitride semiconductor layers, the first to third p-type Group III nitride semiconductor layers being provided on the primary surface of the Group III nitride semiconductor layer, the first and third p-type Group III nitride semiconductor layers sandwiching the second p-type Group III nitride semiconductor layer such that the second p-type Group III nitride semiconductor layer incorporates strain; and an electrode provided on the p-type Group III nitride semiconductor laminate. The electrode is in contact with the first p-type Group III nitride semiconductor layer.

Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device

A group III nitride semiconductor laser device includes a laser structure, an insulating layer, an electrode and dielectric multilayers. The laser structure includes a semiconductor region on a semi-polar primary surface of a hexagonal group III nitride semiconductor support base. The dielectric multilayers are on first and second end-faces for the laser cavity. The c-axis of the group III nitride tilts by an angle ALPHA from the normal axis of the primary surface in the waveguide axis direction from the first end-face to the second end-faces. A pad electrode has first to third portions provided on the first to third regions of the semiconductor regions, respectively. An ohmic electrode is in contact with the third region through an opening of the insulating layer. The first portion has a first arm, which extends to the first end-face edge. The third portion is away from the first end-face edge.

Group III nitride semiconductor light emitting device

A semiconductor device includes: a semiconductor substrate made of a hexagonal Group III nitride semiconductor and having a semi-polar plane; and an epitaxial layer formed on the semi-polar plane of the semiconductor substrate and including a first cladding layer of a first conductive type, a second cladding layer of a second conductive type, and a light-emitting layer formed between the first cladding layer and the second cladding layer, the first cladding layer being made of InAlGaN, where x&#x3e;0 and y&#x3e;0, the second cladding layer being made of InAlGaN, where0&#x2266;x&#x2266;about 0.02 and about 0.03&#x2266;y&#x2266;about 0.07.

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Itami, Japan

Yohei Enya