Commissariat &#xc0; L'&#xc9;nergie Atomique Et Aux &#xc9;nergies Alternatives

Commissariat a L'energie Atomique

Aledia

Soitec

Yohan Desieres

Tiphaine Dupont

Ivan-Christophe Robin

Karim Hassan

Pierre Nicolas

Salim Boutami

Philippe Gilet

Hubert Bono

Laurent Frey

Serge Gidon

Pierre Gidon

Adrien Gasse

Bruno Mourey

Pascal Guenard

Matthew Charles

Jérôme Le Perchec

Gilles Grand

Bertrand Szelag

Ludovic Poupinet

Jean-Luc Martin

Charlotte Gillot

Alexandre Mary

Bernard Aventurier

Francois Levy

François Levy

Photonic transmitter, comprising: The stack comprises: The first waveguide comprises a first portion made of semiconductor located inside the third layer and that extends as far as to the interface between the third and fourth layers.

Photonic transmitter having III-V gain media and adiabatically-coupled waveguides

A photonic transmitter is provided, including a laser source including a first waveguide made of silicon and a second waveguide made of III-V gain material, the waveguides being separated from each other by a first segment of a dielectric layer; and a phase modulator including a first electrode made of single-crystal silicon and a second electrode made of III-V crystalline material, separated from each other by a second segment of the dielectric layer, where a thickness of the dielectric layer is between 40 nm and 1 &#x3bc;m, where a thickness of a dielectric material in an interior of the first segment is equal to the thickness of the dielectric layer, and where a thickness of the dielectric material in an interior of the second segment is between 5 nm and 35 nm, a rest being formed by a thickness of semiconductor material.

Photonic transmitter

A method of manufacturing a gallium nitride light-emitting diode, including the successive steps of: a) forming a planar active gallium nitride light-emitting diode stack including first and second doped gallium nitride layers of opposite conductivity types and, between the first and second gallium nitride layers, an emissive layer with one or a plurality of quantum wells; and b) growing nanowires on the surface of the first gallium nitride layer opposite to the emissive layer.

Method for making a gallium nitride light-emitting diode

The invention relates to an optoelectronic light-emitting device (), including: The optoelectronic device includes at least one photodiode () adjacent the light-emitting diode () having a receiving surface () coated by the photoluminescent material () and adapted to detect at least part of the excitation radiation and/or the photoluminescence radiation coming from the photoluminescent material () through the receiving surface.

Optoelectronic light-emitting device

Device successively including a substrate including a metal layer capable of reflecting a radiation; a first layer of a III/N type alloy, p-type doped, and including a first surface, opposite the metal layer, the first surface being provided with cavities; a light-emitting layer made of a III/N-type alloy, capable of generating the radiation; a second layer of a III/N-type alloy, n-type doped, having the radiation coming out therethrough; wherein a non-metallic filling material transparent in the spectral range is arranged within the cavities.

Light-emitting device

An optoelectronic device including a semiconductor substrate having a face, light-emitting diodes arranged on the face and including wired conical or frustoconical semiconductor elements, and an at least partially transparent dielectric layer covering the light-emitting diodes, the refractive index of the dielectric layer being between 1.6 et 1.8.

Optoelectronic device comprising light-emitting diodes with improved light extraction

A device for back-scattering an incident light ray, including: a host substrate; a structured layer; a first face in contact with a front face of the host substrate; a second flat face parallel to the first face; a first material and a second material which form, in a mixed plane, alternating surfaces at least one of whose dimensions is between 300 nm and 800 nm, the mixed plane is between the first and second face of the structured layer; wherein the refractive index of the first and of the second material are different, the structured layer is covered by a specific layer, the specific layer is made of a material which is different from the first and second materials of the structured layer, and the specific layer is crystalline and semi-conductive.

Structured substrate for LEDs with high light extraction

A spectral filter (-) comprising at least one metallic layer () structured by at least one hole (-) passing through two opposite mains faces of the metallic layer and comprising, in a plane parallel to a plane of one of the two main faces, a first rectangular section whereof a first side has a dimension between around 40 nm and 100 nm, and whereof a second side, perpendicular to the first side, has a dimension between around 150 nm and 1000 nm, and a second rectangular section centered relative to the first rectangular section, a first side of the second section being parallel to the second side of the first section and having a dimension between around 40 nm and 100 nm.

Nanostructured spectral filter and image sensor

An optical filter for filtering an electromagnetic radiation of variable angle of incidence, includes a stack of at least one dielectric or semi-conductor layer arranged between two partially reflective layers, said stack defining a set of Fabry-P&#xe9;rot cavities set to a predetermined wavelength. The average refractive index of the dielectric or semi-conductor layer is variable in a plane orthogonal to the direction of the stack so as to compensate the effects of the variation in the angle of incidence of the electromagnetic radiation on the transmission spectrum of the cavities.

Optical filter suitable for dealing with a radiation of variable incidence and detector including said filter

A light-emitting diode component includes a primary source, a conversion layer forming a secondary source configured for absorbing the primary radiation at least in part and emitting a secondary radiation, an encapsulation layer, situated between the primary and secondary sources. The light-emitting diode component also includes a reflection layer (i) situated between the encapsulation layer and the conversion layer and having a face in contact with the encapsulation layer so as to form an interface with the encapsulation layer, the reflection layer (i) and the encapsulation layer being configured so that the interface allows the primary radiation originating from the primary source to pass and reflects the secondary radiation toward the outside of the light emitting diode.

Light emitting diode component

The instant disclosure describes a photodetector that includes at least one portion of a semiconducting layer formed directly on at least a portion of a reflective layer and to be illuminated with a light beam, at least one pad being formed on the portion of the semiconducting layer opposite the reflective layer portion, wherein the pad and the reflective layer portion are made of a metal or of a negative permittivity material, the optical cavity formed between said at least one reflective layer portion and said at least one pad has a thickness strictly lower than a quarter of the ratio of the light beam wavelength to the optical index of the semiconducting layer, and typically representing about one tenth of said ratio.

Photodetector having a very thin semiconducting region

An electrode of a light-emitting device of the OLED type adapted for forming with a second electrode, an optical cavity, including at least one layer based on a material of refraction index nincluding a structured face comprising a plurality of recesses filled with a material of refractive index ndifferent from n.

Electrode of a light-emitting device of the OLED type

An electronic emission device including plural electron beams including a first structure having a plurality of emission sources of electron beam, hybridized with a second structure including a plurality of diaphragm openings.

Growing community of inventors

Lans en Vercors, France

Yohan Desieres