Taiwan Semiconductor Manufacturing Comp. Ltd.

Yoh-Rong Liu

Sen-Hong Syue

Wen-Kai Lin

Li-Chi Yu

Chi On Chui

Yung-Cheng Lu

Che-Hao Chang

Yee-Chia Yeo

Huicheng Chang

Chen-Fong Tsai

Cheng-I Chu

Yi-Rui Chen

A method of manufacturing a semiconductor device includes forming a multi-layer stack of alternating first layers of a first semiconductor material and second layers of a second semiconductor material on a semiconductor substrate, forming a first recess through the multi-layer stack, and laterally recessing sidewalls of the second layers of the multi-layer stack. The sidewalls are adjacent to the first recess. The method further includes forming inner spacers with respective seams adjacent to the recessed second layers of the multi-layer stack and performing an anneal treatment on the inner spacers to close the respective seams.

Method for manufacturing semiconductor device including annealing treatment of inner spacer layer

Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxidation anneal and heat anneal to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.

Method of forming a nano-FET semiconductor device

Semiconductor device and method

Growing community of inventors

Hsinchu, Taiwan

Yoh-Rong Liu