At&t Bell Laboratories

Tyco Electronics Corporation

The Whitaker Corporation

Yoginder Anand

Percy Bomi Chinoy

Roger J Malik

Semiconductor devices comprise a substrate having a semiconductor disposed thereon with a layer of dielectric material, less than 10 microns thick, disposed about the semiconductor; the dielectric layer has a bond pad disposed on its upper surface a via lined with an electrically conductive material and extending between the bond pad and the semiconductor form an electrically conductive path between the semiconductor device and the bond pad.

Reduced parasitic capacitance semiconductor devices

A semiconductor device structure having a semiconductor device on a substrate with a layer of benzocyclobutane (BCB) disposed about the device with a via between the top surface of the BCB and the device is disclosed. A bond pad is in contact with the via and is connected to a bond ribbon.

The disclosed improved GaAs majority carrier rectifying barrier diodes comprise a p.sup.+ region between semiconductor regions that comprise n-doped material. Exemplary structures are n.sup.+ -i-p.sup.+ -i-n.sup.+ and n.sup.+ -n-p.sup.+ -n-n.sup.+. The improvement comprises use of carbon as the p-dopant and results in readily manufacturable reliable devices.

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Chelmsford, MA, United States of America

Yoginder Anand