Western Electric Company, Inc.

Yogesh Jaluria

Tze Yao Chu

Robert J Lavigna

Raymond E Reusser

George Williams

Peter F Lilienthal, Ii

George Michael Wenger

In Czochralski crystal growing operations, particularly those involving growth of silicon crystals, projecting formations of silicon monoxide, which sometimes form on the surface of the melt-containing crucible just above the surface of the melt, are avoided by perturbing the formation conditions at the region of probable formation. Such perturbations may include increasing the temperature of the crucible at the region of probable formation. The increase in temperature may be provided by including an aperture in the housing which surrounds and supports the crucible to enable locally greater radiative heating of the crucible in the region of probable formation. Other expedients for locally increasing the temperature of the crucible include, without limitation, selective frosting and other techniques for locally changing the emissivity characteristics of the crucible and/or the surrounding material.

Method for avoiding undesirable deposits in crystal growing operations

Method and apparatus for avoiding undesirable deposits in crystal

Articles are heated in a condensation heat transfer facility to effect soldering thereof by transporting said articles into a body of hot saturated vapor within the facility. The hot saturated vapor condenses on, and gives up latent heat of vaporization to, the articles to effect solder reflow. The articles are subsequently quenched in a liquid prior to the withdrawal of the articles from the facility.

Methods and apparatus for heating articles

Growing community of inventors

Kanpur, India

Yogesh Jaluria