Intel Corporation

Sk Hynix Nand Product Solutions Corp.

Skhynix Inc.

Intel Ndtm US LLC

Yogesh B Wakchaure

Xin Guo

Aliasgar S Madraswala

David J Pelster

Kiran Pangal

Ali Khakifirooz

Kristopher H Gaewsky

Hanmant Pramod Belgal

David B Carlton

Robert Frickey

Neelesh Vemula

Qingru Meng

Pranav Kalavade

Paul D Ruby

Donia Sebastian

Iwen Chao

Feng Zhu

Mark Anthony Golez

Eric L Hoffman

Camila Jaramillo

Lei Chen

Ye Zhang

Myron Loewen

Sagar Upadhyay

Charan Srinivasan

Trupti Bemalkhedkar

Brennan A Watt

Ryan J Norton

Sagar S Sidhpura

Cole Uhlman

Violante Moschiano

Michele Incarnati

Walter Di Francesco

Anand S Ramalingam

Shantanu R Rajwade

Neal R Mielke

Shirish Dnyaneshware Bahirat

Ravi J Kumar

Ming Zhang

Rohit Sudhir Shenoy

Scott Nelson

Hiroyuki Sanda

Yu Du

Bharat M Pathak

Naveen Prabhu Vittal Prabhu

Sarvesh Varakabe Gangadhar

Jonathan De Vries

Curtis A Gittens

Antonino Giuseppe La Spina

Netra Mahuli

Bhaskar Venkataramaiah

Eric Hoffman

Mark Anthony Sumabat Golez

Robert E Frickey

Joseph F Doller

Kyung Jean Yoon

Varsha Regulapati

Naga Kiranmayee Upadhyayula

Bhargavi Govindarajan

John Egler

Justin R Dayacap

Yushin Ahn

Gulzar Kathawala

Wanik Cho

Taehun Park

Archana Rajagopal

Mohammad Nasim Imtiaz Khan

Fei Xue

Sudhakar Ayyasamy

Mark Anthony S Golez

Renjie Chen

Svanhild M Salmons

In accordance with some embodiments of the present disclosure, a method is performed by processing circuitry of a storage device for writing data to memory of a storage device. The method is related to executing a program to write data written in a plurality of single-layer cells (SLCs) in a first portion of the memory to a plurality of multi-level cells (MLCs) in a second portion of the memory using a single program command. The single program command includes an address of each SLC in the first portion of the memory and optionally, additional information regarding SLC read-level shifts. Executing the single program command includes reading from each SLC of the plurality of SLCs, storing at least some of the respective SLC data in the plurality of latches, and writing the SLC data that was stored in the plurality of latches to the plurality of MLCs.

Methods and systems for SLC copyback operations

A method performed by a solid state drive is described. The method includes, on a channel that internally couples a controller of the solid state drive to a storage device of the solid state drive, sending write data for a program operation to be performed by one of the storage device's logical units in separate chunks over the channel. The method also includes inserting higher priority traffic items of other logical units of the storage device in between the separate chunks.

Solid state drive with multiplexed internal channel access during program data transfers

An embodiment of an electronic apparatus may include one or more substrates, and a controller coupled to the one or more substrates, the controller including circuitry to control access to NAND-based storage media that includes a plurality of NAND devices, maintain respective read disturb (RD) counters for each of two or more tracked units at respective granularities, maintain respective global RD counters for each of the two or more tracked units and, in response to a read request, increment one or more global RD counters that correspond to the read request, determine if a global RD counter for a tracked unit matches a random number associated with the tracked unit and, if so determined, increment a RD counter for the tracked unit that corresponds to the read request and generate a new random number for the tracked unit. Other embodiments are disclosed and claimed.

Read disturb tracking based on statistical probability

Dynamic program caching reduces latency of a program operation on multi-level cell (MLC) memory having at least three pages and programmable with multiple threshold voltage levels, such as a Triple Level Cell (TLC) NAND. A controller determines that the program operation can be initiated without loading all pages into the memory. In response, the NAND loads a first page and then executes portions of the program operation in parallel, at least in part, with loading subsequent pages. The NAND behavior is modified to monitor data loading completion times, to copy pages from a cache register to a data register as needed, and to resume program operation if a shutdown occurs. The portions of the program operation include a program prologue operation and a pulse verify loop for the first voltage level (L1) of the MLC memory.

Dynamic program caching

Mechanisms for reducing the impact of drive parameter writes on solid state drive (SSD) performance are provided, the methods including: saving one or more SSD drive parameters of an SSD to volatile memory of the SSD using an SSD controller; detecting a power-loss condition in the SSD; and copying the one or more SSD drive parameters from the volatile memory of the SSD to non-volatile memory of the SSD. In some embodiments, the SSD is a NAND SSD. In some embodiments, the one or more SSD drive parameters include one or more of: a drive health parameter, a drive internal statistic, drive thermal information, drive debug information, a number of host and non-volatile memory read and writes, media error handling data, temperature and throttle information, and firmware download information. In some embodiments, the volatile memory is one or more of: random-access memory and dynamic random-access memory.

Systems, methods, and media for reducing the impact of drive parameter writes on solid state drive performance

A method and apparatus to reduce read retry operations in a NAND Flash memory is provided. To reduce the number of read retries for future reads, a word line group is assigned an optimal read voltage, the reference voltage that results in eliminating the read error for the word line is selected as the optimal read voltage (also referred to as a 'sticky voltage') for the word line group to be used for a next read of the page. An optimal read voltage per word line group for the page per NAND Flash memory die is stored in the lookup table. Storing an optimal read voltage per word line group instead of per die reduces the number of read retries.

Method and apparatus to improve read latency of a multi-threshold level cell block-based non-volatile memory

An apparatus is described. The apparatus includes a memory chip having logic circuitry to suspend application of an erasure voltage, wherein, respective responses of the erasure voltage to a decision to suspend the application of the erasure voltage depend on where the erasure voltage is along its waveform.

Solid state drive (SSD) with in-flight erasure iteration suspension

An apparatus comprises a plurality of memory cells; a plurality of sense circuits, a sense circuit comprising a sense node selectively coupled to a bitline coupled to a first cell of the plurality of memory cells; and a controller to transpose a value indicative of a voltage of the first cell to the sense node; isolate the sense node from the bitline; and calibrate a parameter for the sense circuit based on outputs of the sense circuit for each of a plurality of different applied values of the parameter.

Automatic read calibration operations

A disclosed example to use an erase-suspend feature on a memory device includes a host interface to receive a first erase command to perform an erase operation; and a control circuit to: based on the erase-suspend feature being enabled at the memory device, suspend the erase operation based on determining that a length of time equal to an erase segment duration value has elapsed, the length of time elapsed being relative to a start of an erase segment, and the erase segment duration value specified in a configuration parameter for the erase-suspend feature; perform a second memory operation when the erase operation is suspended; and after the second memory operation is complete, resume the erase operation based on receiving a second erase command from the memory host controller.

Methods and apparatus to perform erase-suspend operations in memory devices

A method and apparatus to reduce read latency and improve read quality of service (Read QoS) for non-volatile memory, such as NAND array in a NAND device. For read commands that collide with an in-progress program array operation targeting the same program locations in a NAND array, the in-progress program is suspended and the controller allows the read command to read from the internal NAND buffer instead of waiting for the in-progress program to complete. For read commands queued during an in-progress program that is processing pre-reads in preparation for a program array operation, pre-read bypass allows the reads to be serviced between the pre-reads and before the program's array operation starts. In this manner, read commands can be serviced without suspending the in-progress program. Allowing internal NAND buffer reads and enabling pre-read bypass reduces read latency and improves Read QoS.

Read quality of service for non-volatile memory

A memory device that has been programmed to store a single bit or multiple bits can perform a determination of a number of threshold voltages in one or more threshold voltage level regions. Based on the number of threshold voltages meeting or exceeding a threshold level, a page of bits can be read and if the bit error rate of the page of bits is below a threshold rate, the page of bits can be stored in the cells together with other bits stored in the cells and a provided additional page of bits. However, if the bit error rate of the page of bits is at or above the threshold rate, then the bit or bits stored in the cells can be error corrected and stored together with a provided additional page of bits.

Memory programming techniques

A data structure is maintained for performing a program operation that is allowed to be suspended to perform reads in a NAND device, where the data structure indicates a plurality of tiers, where each tier of the plurality of tiers has a number of allowed suspends of the program operation while executing in the tier, and where a sum of the number of allowed suspends for all tiers of the plurality of tiers equals a maximum allowed number of suspends of the program operation. In response to performing a resume of the program operation, after performing a read following a suspend of the program operation, a determination is made of a tier of the plurality of tiers for the program operation and a subsequent suspend of the program operation is performed only after a measure of progress of the program operation has been exceeded in the determined tier.

Method, system, and apparatus for multi-tiered progressive memory program operation suspend and resume

Independent multi-plane commands for non-volatile memory devices are described. In one example, a three-dimensional (3D) NAND memory device includes 3D NAND dies, each die including multiple planes of memory cells. The device includes input/output (I/O) circuitry to receive multiple commands from a host, each of the received commands to access one of the planes. The device includes logic (which can be implemented with, for example, an ASIC controller, firmware, or both) to queue the commands in separate queues for each of the planes based on a target plane of each of the commands. The logic issues the commands to their target planes independent of other planes' status, and tracks completion status of the commands independently for each plane.

Independent NAND memory operations by plane

An example apparatus includes a non-volatile memory including a first memory having a first write rate and a second memory having a second write rate, the first write rate greater than the second write rate An example controller is to determine, based on a ratio, a first portion of the data to be written to the first memory, and a second portion of the data to be written to the second memory type, the second portion of the data not included in the first portion of the data.

Methods and apparatus to configure performance of a solid state drive based on host write bandwidth

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Folsom, CA, United States of America

Yogesh B Wakchaure