Western Digital Technologies, Inc.

Yogendra Singh Sikarwar

Rakshit Tikoo

Ankit Vijay Naghate

Arun Thandapani

Lee M Gavens

Ashish Singla

Milind Giradkar

Prateek Kumar Tr

Various processes for efficiently and effectively determining or predicting whether data stored in a non-volatile storage device is unreadable and/or unrecoverable during a read-retry process. To make the determination, different dynamic read threshold (DRT) entries of a dynamic read threshold (DRT) table are applied, in parallel, across different planes of the non-volatile storage device to determine whether the data is unreadable and/or unrecoverable.

Predicting an unsuccessful error correction code condition using a dynamic read threshold table

A storage system has a memory with primary and secondary blocks. Data is stored redundantly in the primary and secondary memory blocks but in a different programming order. For example, data is programmed in the first memory block starting at a first wordline and ending at a last wordline, while data is programmed in the second memory block starting at the last wordline and ending at the first wordline.

Storage system and dual-write programming method with reverse order for secondary block

A memory device includes logic to detect the last page written in multi-plane non-volatile memory. The device includes a memory array, and a storage controller. The memory array includes multiple planes and multiple word lines operable on the memory array. The storage controller is configured to divide the word lines into contiguous sub-ranges and assign a subset of the word lines to boundaries of the sub-ranges. Each word line of the subset of word lines is assigned to a page in a different one of the memory planes. The controller operates the subset of word lines to sense a page programmed or erased state from each of the memory planes in parallel.

Detecting last page written in multi-plane non-volatile memory

A storage system and method for smart folding are provided. In one example, the storage system has a memory with a plurality of single level cell (SLC) blocks and a multi-level cell (MLC) block. The MLC block has a plurality of pages, each with a different sense time. The storage system tracks a read count of each of the plurality of SLC blocks and determines how to fold the plurality of SLC blocks into the plurality of pages based on the read count of each of the plurality of SLC blocks and the sense time of each of the plurality of pages. In this way, SLC blocks with higher read counts can be folded into pages that have faster sense times.

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Karnataka, India

Yogendra Singh Sikarwar