Eni Technologies Inc.

Other

Eni Div. of Astec America, Inc.

Yogendra K Chawla

Leonid Reyzelman

Bradford J Lyndaker

Steven J Smith

Craig A Covert

A high power grounded-drain source follower RF amplifier circuit employs a high voltage MOSFET. The RF signal at the input is applied with respect to ground via an isolation transformer whose secondary feeds the signal between gate and source. The output is taken from the source with respect to drain, which is grounded. A 13.56 MHz 3 KW power amplifier topology with isolated RF input drive for each MOSFET die uses a pair of kilowatt power transistors or KPTs, in which there are multiple large area MOSFET dies, with the drain regions of the dies being formed over a major portion of the die lower surface. The drain regions are in direct electrical and thermal contact with the conductive copper flange. The source and gate regions are formed on the dies away from the flat lower surface. One or more pairs of multi-chip KPTs can be configured to design stable 2.5 KW, 5 KW and 10 KW RF plasma generators at 13.56 MHz. The generators employ a low pass/high pass filter arrangement (diplexer) at the output for low harmonic distortion and dissipative harmonic termination. The terminated high pass filter reduces the gate-to-source differential RF voltage and protects the MOSFETS from damage.

Parallel HV MOSFET high power stable amplifier

A linear RF power amplifier employs push-pull pairs of high voltage mosfets. A minimum of transformers is employed, with an impedance matching transformer feeding an input balun supplying the input signal in push-pull to the gates of the mosfets. The drains are coupled to balanced legs of an output balun, followed by an output impedance matching transformer. Thermal sensors are employed for control of gate bias and also for control of drain voltage. The temperature sensors are mounted in the air inlet path and on the spreader plate of the heat sink. An aluminum or fiberglass strap is used to press the transistors against the spreader plate thereby ensuring good thermal contact with the transistor dies.

Linear RF power amplifier

A high power radio frequency amplifier employs a power stage in which a bank of push-pull stages are connected in parallel. These power stages employ relatively low-cost high voltage MOSFETs. Because the devices are operated in their active regions, these MOSFETs are susceptible to drops in gain during operation due to heating of the transistor die. The gain fluctuation has a first, slower component that varies over a time of several minutes, and a second, faster component that varies over a span of seconds. The amplifier has B+ or drain voltage control to compensate for short-term (minutes) gain degradation and preamplifier gate voltage control to compensate for short-term (seconds) gain degradation.

Gain stability arrangement for HV MOSFET power amplifier

A harmonic and subharmonic filter is coupled between a high power RF energy source and a non-linear RF load via a matching network, such as a plasma chamber. The filter passes high power RF energy in a band centered on a predetermined radio frequency, i.e., 13.56 MHz, but blocks and attenuates out-of-band energy at frequencies which are multiples of or fractions of the predetermined frequency. The harmonic and subharmonic filter comprises an input terminal, an output terminal, a series LC resonance path connected between the input and output terminals, and tuned to the predetermined radio frequency, a series resistive path formed of first and second resistors, and a parallel LC resonance path between the junction of the two resistors and ground.

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Pittsford, NY, United States of America

Yogendra K Chawla