Intel Corporation

University of California

Yoel Shetrit

John E Bowers

John Heck

Ansheng Liu

Richard O Jones

Ling Liao

Matthew Sysak

Siddharth Jain

Ran Feldesh

Michael Geva

A semiconductor metallurgy includes a ratio of germanium and palladium that provides low contact resistance to both n-type material and p-type material. The metallurgy allows for a contact that does not include gold and is compatible with mass-production CMOS techniques. The ratio of germanium and palladium can be achieved by stacking layers of the materials and annealing the stack, or simultaneously depositing the germanium and palladium on the material where the contact is to be manufactured.

CMOS-compatible gold-free contacts

A method and apparatus for high speed silicon optical modulation is described using a PN diode. In one example, an optical waveguide has adjoining first and second doped semiconductor regions. The first and second regions have opposite doping types and the first doped region extends in two perpendicular directions through the waveguide.

Method and apparatus for high speed silicon optical modulation using PN diode

Growing community of inventors

Kfar Ben-Nun, Israel

Yoel Shetrit