Apple Inc.

Anobit Technologies Ltd.

Yoav Kasoria

Dotan Sokolov

Naftali Sommer

Ofir Shalvi

Eyal Gurgi

Oren Golov

Shai Winter

A method for data storage includes storing first data bits in a set of multi-bit analog memory cells at a first time by programming the memory cells to assume respective first programming levels. Second data bits are stored in the set of memory cells at a second time that is later than the first time by programming the memory cells to assume respective second programming levels that depend on the first programming levels and on the second data bits. A storage strategy is selected responsively to a difference between the first and second times. The storage strategy is applied to at least one group of the data bits, selected from among the first data bits and the second data bits.

Programming schemes for multi-level analog memory cells

A method for operating a memory includes applying at least one pulse to a group of analog memory cells, so as to cause the memory cells in the group to assume respective storage values. After applying the pulse, the respective storage values are read from the memory cells in the group. One or more statistical properties of the read storage values are computed. A wear level of the group of the memory cells is estimated responsively to the statistical properties.

Wear level estimation in analog memory cells

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Kfar Netar, Israel

Yoav Kasoria