Tokyo Electron Limited

Yo Suzuki

Junichi Kitano

Masami Yamashita

Satoru Shimura

Hidefumi Matsui

Takayuki Katano

Hiroyuki Iwaki

Toru Aoyama

Kousuke Yoshihara

Takahiro Kitano

Naruaki Iida

Yuji Matsuyama

Masatoshi Deguchi

On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

Substrate processing apparatus and substrate processing method

A developing unit, a coating unit and a plurality of cooling plates are arranged in a process station which performs a resist coating and so on and a wafer is transferred among them by a substrate transfer device. The temperature of an area to where the wafer is transferred is detected by a temperature/humidity detector and the temperature of the wafer which is cooled by the cooling plates is adjusted accordingly based on a detected value so that the temperature of the wafer when transferred to the coating unit becomes a coating temperature of a processing solution. Thereby, the wafer is transferred to the coating unit while maintaining its temperature with high accuracy to be coated with a resist solution, so that a formation of an uneven processing due to the temperature change can be prevented and a uniform processing can be performed.

Substrate processing method and substrate processing apparatus

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Miyagi-gun, Japan

Yo Suzuki