Toppan Printing Co., Ltd.

Yo Sakata

Norihito Fukugami

Takashi Haraguchi

Masato Kon

Genta Watanabe

Kazuaki Matsui

Yutaka Kodera

Kazuto Yamamoto

Masahito Tanabe

Tooru Komizo

A solid-state image sensor including a semiconductor layer having a light incident side, a support substrate positioned on an opposite side of the light incident side of the semiconductor layer, photoelectric conversion elements formed two-dimensionally in the semiconductor layer, light reflection structures formed on a surface of the support substrate which faces toward the semiconductor layer, and positioned such that the light reflection structures face the photoelectric conversion elements, respectively, and an interlayer insulating layer formed between adjacent ones of the light reflection structures. The light reflection structures include a light transmission layer and a reflective metal that covers a surface of the light transmission layer opposite to a surface facing the semiconductor layer, and the reflective metal has a concave curved surface facing the photoelectric conversion elements.

Solid-state image sensor

A reflective mask blank, a reflective mask, and methods for manufacturing those, which suppress reflectance at a light-shielding frame. The reflective mask includes a substrate, a multilayered reflective layer formed on the substrate, an absorption layer formed on the multilayered reflective layer, and a frame-shaped light-shielding frame area at which the absorption layer has a film thickness larger than a film thickness at other areas. The multilayered reflective layer is diffused and mixed at the light-shielding frame area through melting.

Reflective mask blank and reflective mask, and methods for manufacturing reflective mask blank and reflective mask

A reflective exposure mask blank and a reflective exposure mask are provided, and the mask enables accurate exposure and transcription without having light being reflected from areas other than a circuit pattern area. The reflective mask blank has, on a substrate (), a multilayer reflective film (), a protective film (), an absorption film (), and a reverse-surface conductive film (). A reverse-surface conductive film is formed from indium tin oxide. The substrate contains SiO, TiO, and at least one oxide of manganese (Mn), copper (Cu), cobalt (Co), chromium (Cr), iron (Fe), silver (Ag), nickel (Ni), sulfur (S), selenium (Se), gold (Au), and neodymium (Nd). The reflective mask is manufactured by forming a circuit pattern by selectively stripping the absorption film on the reflective mask blank, and forming a light-shielding frame by stripping the multilayer reflective film, the protective film, and the absorption film around the circuit pattern.

Mask blank for reflection-type exposure, and mask for reflection-type exposure

A reflective mask having a light-shielding frame with high light-shielding performance, and a method for manufacturing thereof. In a reflective mask having a light-shielding frame dug into a multilayered reflective layer, when side etching is performed or processing to obtain a reverse tapered shape is performed only on the multilayered reflective layer, it becomes possible to suppress reflection of EUV light (extreme ultraviolet light) in the vicinity of the edge of the light-shielding frame, provide a reflective mask having high light-shielding ability, and form a transcription pattern with high accuracy.

Growing community of inventors

Tokyo, Japan

Yo Sakata