Matsushita Electric Industrial Co., Ltd.

Yo Ichikawa

Kentaro Setsune

Hideaki Adachi

Akira Asai

Takeshi Takagi

Yoshihiro Hara

Katsuya Nozawa

Yoshihiko Kanzawa

Tohru Saitoh

Koji Katayama

Koichiro Yuki

Syunichiro Kawashima

Takahiro Kawashima

Minoru Kubo

Koichi Mizuno

Teruhito Oonishi

Teruhito Ohnishi

Masahiro Sakai

Akira Enokihara

Toshifumi Sato

In a field effect transistor, an Si layer, an SiC (SiC) channel layer, a CN gate insulating filmmade of a carbon nitride layer (CN) and a gate electrodeare deposited in this order on an Si substrate. The thickness of the SiC channel layeris set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source regionand a drain regionare formed on opposite sides of the SiC channel layer, and a source electrodeand a drain electrodeare provided on the source regionand the drain region, respectively.

Semiconductor devices and method for manufacturing the same

In a field effect transistor, an Si layer, an SiC (SiC) channel layer, a CN gate insulating film made of a carbon nitride layer (CN) and a gate electrode are deposited in this order on an Si substrate. The thickness of the SiC channel layer is set to a value that is less than or equal to the critical thickness so that a dislocation due to a strain does not occur according to the carbon content. A source region and a drain region are formed on opposite sides of the SiC channel layer, and a source electrode and a drain electrode are provided on the source region and the drain region, respectively.

In the method for fabricating a semiconductor device of the present invention, a collector layer of a first conductivity type is formed in a region of a semiconductor substrate sandwiched by device isolation. A collector opening is formed through a first insulating layer deposited on the semiconductor substrate so that the range of the collector opening covers the collector layer and part of the device isolation. A semiconductor layer of a second conductivity type as an external base is formed on a portion of the semiconductor substrate located inside the collector opening, while junction leak prevention layers of the same conductivity type as the external base are formed in the semiconductor substrate. Thus, the active region is narrower than the collector opening reducing the transistor area, while minimizing junction leak.

Semiconductor device and method for fabricating the same

In a bipolar transistor block, a base layer ( ) of SiGe single crystals and an emitter layer ( ) of almost 100% of Si single crystals are stacked in this order over a collector diffused layer ( ). Over both edges of the base layer ( ), a base undercoat insulating film ( ) and base extended electrodes ( ) made of polysilicon are provided. The base layer ( ) has a peripheral portion with a thickness equal to that of the base undercoat insulating film ( ) and a center portion thicker than the peripheral portion. The base undercoat insulating film ( ) and gate insulating films ( and ) for a CMOS block are made of the same oxide film. A stress resulting from a difference in thermal expansion coefficient between the SiGe layer as the base layer and the base undercoat insulating film can be reduced, and a highly reliable BiCMOS device is realized.

A surface acoustic module is stable, and its operation frequencies can be varied with high precision. A method of manufacturing the surface acoustic module prevents the module's electrodes from being broken during separation of a sheet of modules into individual components. The surface acoustic module includes electrodes for transmitting and receiving a surface acoustic wave, a surface acoustic wave transmitting substrate, a high resistance thin film, and a thin film for differentiating the transmission velocity of a surface acoustic wave at the high resistance thin film from that at the substrate. The method includes the steps of forming a metallic film on a sheet of the surface acoustic wave transmitting substrate, of forming the electrodes on the metallic film, and of irradiating light or the like to the metallic film so as to increase the film's resistivity.

Method of manufacturing surface acoustic ware modules

A field-effect type superconducting device includes a channel layer. The channel layer includes Bi-based oxide compound containing Cu. A source electrode contacts the channel layer. A drain electrode contacts the channel layer. A gate insulating film made of insulating material extends on on the channel layer. A gate electrode extends on the gate insulating film.

Field-effect type superconducting device including bi-base oxide

Method of manufacturing a surface acoustic wave module

Surface acoustic wave module with thin film for wave transmission

An oxide is formed which will form an oxide superconductor containing a Cu-O atomic layer. The oxide is hydrogenated. The oxide is oxidized after it is hydrogenated. The hydrogenation and the oxidization are executed simultaneously with or after the oxide is formed. The hydrogenation and the oxidization improve the superconducting characteristics of the oxide superconductor.

Oxide superconductor and method and apparatus for fabricating the same

A thin-film superconductor includes a substrate, a ferroelectric film, and a superconducting oxide film. The ferroelectric film extends on the substrate. The ferroelectric film is made of a crystal contains Bi and O. The superconducting oxide film extends on the ferroelectric film, and containing Bi, Cu, and an alkaline-earth metal element. The superconducting oxide film may contain at least two different alkaline-earth metal elements.

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Osaka, Japan

Yo Ichikawa