Lam Research Corporation

Lam Research Corpporation

Yiwen Fan

Yang Pan

Wenbing Yang

Samantha Siamhwa Tan

Ran Lin

Jengyi Yu

Tamal Mukherjee

Shih-Ked Lee

Boris Volosskiy

Da Li

Timothy William Weidman

Wook Choi

Jeffrey S Marks

Samantha SiamHwa Tan

Richard Alan Gottscho

Daniel Peter

Zhongwei Zhu

Mohand Brouri

Ziad El Otell

Development of resists are useful, for example, to form a patterning mask in the context of high-resolution patterning. Development can be accomplished using a halide-containing chemistry such as a hydrogen halide. A metal-containing resist film may be deposited on a semiconductor substrate using a dry or wet deposition technique. The resist film may be an EUV-sensitive organo-metal oxide or organo-metal-containing thin film resist. After exposure, the photopatterned metal-containing resist is developed using wet or dry development.

Photoresist development with halide chemistries

A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and performing a fluorine containing plasma cleaning phase.

Method for cleaning a chamber

A method for atomic layer etching a metal containing layer is provided. At least a region of a surface of the metal containing layer is modified to form a modified metal containing region by exposing a surface of the metal containing layer to a modification gas, wherein adjacent to the modified metal containing region remains an unmodified metal containing region. The modified metal containing region is selectively removed with respect to the unmodified metal containing region by exposing the surface of the metal containing layer to an inert bombardment plasma generated from an inert gas.

Atomic layer etching for subtractive metal etch

A method is provided. A substrate situated in a chamber is exposed to a halogen-containing gas comprising an element selected from the group consisting of silicon, germanium, carbon, titanium, and tin, and igniting a plasma to modify a surface of the substrate and form a modified surface. The substrate is exposed to an activated activation gas to etch at least part of the modified surface.

Chemical etch nonvolatile materials for MRAM patterning

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Fremont, CA, United States of America

Yiwen Fan