Gree Electric Appliances, Inc. of Zhuhai

Edgeless Semiconductor Co., Ltd. of Zhuhai

Yiren Lin

Bo Shi

Dan Zeng

Daokun Chen

Some embodiments of the present disclosure provide a silicon carbide metal oxide semiconductor field effect transistor and a manufacturing method. The transistor includes first and second cells which jointly include a drain electrode layer, an ohmic contact layer, a substrate layer, an epitaxial layer, an interlayer dielectric layer, and a source electrode layer, the first cell further includes a first deep well region, a second deep well region, a first shallow well region, a second shallow well region, a two first source region, a two second source region, a first gate oxide layer, and a first polysilicon gate, and the second cell further includes a third deep well region, a fourth deep well region, a third shallow well region, a fourth shallow well region, a second gate oxide layer, a third gate oxide layer, a second polysilicon gate, and a third polysilicon gate.

Silicon carbide metal oxide semiconductor field effect transistor and manufacturing method of silicon carbide metal oxide semiconductor field effect transistor

Growing community of inventors

Zhuhai, China

Yiren Lin