Tcl Technology Group Corporation

Yiran Yan

Fan Yang

Zitong Ao

Xuesen Lai

This disclosure involves a quantum dot light-emitting diode and its preparation method, the quantum dot light-emitting diode includes a quantum dot light-emitting layer set between a cathode and an anode, and a hole transport layer between the anode and the quantum dot light-emitting layer, an interface layer is set between the hole transport layer and the quantum dot light-emitting layer. An interface layer is set between the hole transport layer and the quantum dot light-emitting layer, a material of the interface layer is sulfide, a general structural formula of the sulfide is LiBSwhere B is one or more of the Sn, P, Si, Ge; a HOMO energy level of the interface layer is greater than the HOMO energy level of the hole transport layer and less than that of the quantum dot light-emitting layer.

Quantum dot light-emitting diode and preparation method therefor

A fabrication method for a light-emitting device includes providing a hole functional layer disposed between a quantum dot light-emitting layer and an anode, and providing an electron functional layer disposed between the quantum dot light-emitting layer and a cathode. The hole functional layer includes a mixed material of a hole transport material and a hole injection material. A thickness of the hole functional layer being selected from a thickness range corresponding to ⅓˜⅔ of abscissa between an origin and a first positive trough in a cavity standing wave of the mixed material. The absolute value of a difference between a thickness of the electron functional layer and a thickness corresponding to a first positive crest of a cavity standing wave of an electron functional material is less than or equal to 5 nm.

Growing community of inventors

Huizhou, China

Yiran Yan