Fifth Electronics Research Institute of Ministry of Industry and Information Technology

China Electronic Product Reliability and Environmental Testing Research Institute

The South China University of Technology

China Electronic Product Reliability and Environmental Testing Research Institute (the Fifth Electronic Research Institute of Ministry of Industry and Information Technology) (ceprei)

Fifth Electronics Research Institute of Ministry of Industry and Information Techonoly

China Electronic Product Reliability and Environmental Testing Research Institute ((the Fifth Electronic Research Institute of Ministry of Industry Anbd Information Technology (ceprei))

Yiqiang Chen

Yunfei En

Yun Huang

Yudong Lu

Bo Hou

Dengyun Lei

Wenxiao Fang

Xiaowen Zhang

Changjian Zhou

Lichao Hao

Shuo Zhang

Haipin Wu

Dazhi Wang

Yinghui Chen

Weiheng Shao

Haofan Long

Yichi Zhang

Chang Liu

Ang Li

Chunhua He

Yuan Liu

Liwei Wang

Qingzhong Xiao

Yihang Lin

A chip defect modifying device and a chip defect modifying method allow carbon dioxide to be in a supercritical state, enhance a passivation effect of hydrogen on the chip, heat a surface of the chip with microwaves emitted by a microwave module, and further promote a diffusion of hydrogen molecules and atoms in the chip. Sound waves emitted by the ultrasonic module act with a supercritical fluid of the carbon dioxide, causing cavitation of the supercritical fluid, which promotes the diffusion of hydrogen molecules and atoms in the chip. An activator is added to adsorb the hydrogen molecules, which adsorb onto metal positions on a surface of platinum, thereby forming hydrogen atoms and achieving a decomposition of the hydrogen molecules. The number of the hydrogen atoms increases, which promotes a formation of covalent bonds between the hydrogen atoms and atoms in the chip, and thereby enhancing the passivation effect.

Chip defect modifying device and method

In a method for monitoring a degradation mechanism of a switch device in a power conversion circuit. When individually determining the degradation mechanism of internal defects of the switch device, it is determined through a change trend of a real-time current change rate that internal defect degradation is caused by an increase of an oxide layer defect density or an interface defect density. It is confirmed through a decrease in the real-time current change rate that internal defect degradation is caused by the increase of the oxide layer defect density. When the real-time current change rate increases, it is determined through a secondary testing including the on-state resistance and low-frequency noise testing that degradation is caused by accurate packaging and/or the increase of the interface defect density.

Method for monitoring degradation mechanism of switch device in power conversion circuit

The present disclosure relates to an asymmetric compensation method and apparatus for a two-port near field probe, a device, and a storage medium. The method includes: obtaining a first scattering parameter collected by a symmetric two-port network established based on a symmetric two-port near field probe; obtaining a second scattering parameter collected by an asymmetric two-port network established based on an asymmetric element; obtaining an overall response of a calibration network in a magnetic field environment, the calibration network being established based on the symmetric two-port near field probe and the asymmetric element; calculating a calibration factor based on the scattering parameter of the symmetric two-port near field probe, the scattering parameter of the asymmetric element, and the overall response of the calibration network in the magnetic field environment; and compensating the symmetric two-port near field probe according to a calibration factor.

Asymmetric compensation method and apparatus for two-port near field probe, computer device, and storage medium

Disclosed are a method and device for detecting system failure, a computer device, and a storage medium. The method includes obtaining, when a system to be detected is powered on or off, a real-time voltage oscillation signal acquired by a voltage sensor arranged in a detection circuits of the system. The detection circuit is a circuit where a source and drain of a switching device in the system are located. A degradation trend of the system is determined according to the real-time voltage oscillation signal and a reference voltage oscillation signal corresponding to the detection circuit of the system. A failure detection for the system is performed according to the degradation trend of the system.

Method and device for detecting system failure, computer device, and storage medium

Disclosed are a method, device and system for health monitoring of SoC. The method includes: acquiring in real time sensor data of sensors monitoring SoC performance, the sensor data including reliability degradation sensor data, temperature sensor data, noise sensor data and current sensor data; extracting characteristic data representative of the SoC performance from the sensor data; performing analysis and prediction on the characteristic data in real time by using a prediction algorithm to obtain a performance state and a performance degradation trend of the SoC; outputting performance state information and performance degradation trend information of the SoC. The disclosed method, device and system for health monitoring of SoC can monitor the performance state of the SoC in real time and predict the performance degradation trend of the SoC in real time.

Method, device and system for health monitoring of system-on-chip

A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime &#x3c4;, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point &#x3c4;, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time &#x3c4;, acquiring a remaining life of electromigration failure corresponding to &#x3c4;' based on &#x3c4;, &#x3c4;and &#x3c4;. A device for remaining life prediction for electromigration failure is also disclosed.

Method and device of remaining life prediction for electromigration failure

An ESD failure early warning circuit for an integrated circuit is disclosed, including a positive voltage stress generation module, a negative voltage stress generation module, a buck module, a warning output module, capacitors C, C, and diodes D, D, D, Dand D. The ESD failure early warning circuit can report a warning timely when there is an ESD event in the monitored integrated circuit, to improve the reliability of the device effectively. Moreover, the stress voltage generated by the positive voltage stress generation module and the negative voltage stress generation module is adjustable, so the stress voltage can be set flexibly by a user according to actual condition of the monitored integrated circuit. The present invention has high flexibility and wide application prospect.

ESD failure early warning circuit for integrated circuit

An on-chip TDDB degradation monitoring and failure early warning circuit for SoC. A control circuit module converts Qand Qsignals into a switch state control signal and outputs the switch state control signal to a digital conversion module for TDDB performance degradation. A MOS transistor of a first MOS transistor circuit within the digital conversion module for TDDB performance degradation is in a stress state of a supply voltage, and a MOS transistor of a second MOS transistor circuit is in a non-stress state. The first and second MOS transistor circuits output a first frequency value and a second frequency value to the output selection module. The output selection module outputs the first frequency value from the digital conversion module to the counter B for recording, or outputs the second frequency value to the counter A for recording. The counter module determines the degradation level of TDDB performance.

On-chip TDDB degradation monitoring and failure early warning circuit for SoC

The present disclosure relates to a system and method for health monitoring and early warning for an electronic device. A sensor is used to monitor a physical parameter of a circuit board of a host electronic system of the electronic device to acquire sensor data, and transmit the acquired sensor data to an embedded control device. The sensor data includes at least one of current data, vibration data, temperature data and voltage data. The embedded control device is used to extract a feature from the sensor data to acquire feature data, and perform real-time analysis and prediction based on the feature data to obtain and display a prediction result. In this way, the user can be provided with real-time health monitoring and real-time prediction information for the host electronic system circuit board.

System and method for health monitoring and early warning for electronic device

A method for predicting remaining life of electromigration failure is disclosed. The methods includes: establishing an electromigration life model of a MOS device; acquiring a normal electromigration failure lifetime &#x3c4;1, based on a current density and a first environment temperature under a preset normal operating condition and the electromigration life model; acquiring a current density stress, based on a target prognostic point &#x3c4;2, a second environment temperature and the electromigration life model; inputting the current density stress into a MOS device electromigration failure warning circuit based on a prognostic cell; and if the prognostic circuit of EM failure for a MOS device outputs a high level after a time &#x3c4;3, acquiring a remaining life of electromigration failure corresponding to &#x3c4;2' based on &#x3c4;1, &#x3c4;2 and &#x3c4;3. A device for remaining life prediction for electromigration failure is also disclosed.

A prognostic circuit of EM failure for IC is disclosed, which includes a current monitoring module, the current monitoring module includes a current output module electrically connected with a monitoring metal wire, and one or more conductive metals covered by an oxide layer and electrically insulated with the monitoring metal wire, the current output module includes at least one current source, the conductive metal is electrically connected with the output port of the current monitoring module, and the monitoring metal wire is surrounded by the conductive metal. The above prognostic circuit can give a warning for short-circuit failure caused by a whisker created by EM. Meanwhile, the prognostic circuit of the present disclosure can also be added a resistance warning, and it can indicate the failure of the resistance increased by EM and the short circuit caused by whisker, so as to greatly increase the warning efficiency of the EM.

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Guangzhou, China

Yiqiang Chen