Acm Research (Shanghai) Inc.

Acm Research, Inc.

Yinuo Jin

Jian Wang

Jun Wang

Xi Wang

Fuping Chen

Xiaoyan Zhang

Zhaowei Jia

Xuejun Li

Fufa Chen

Hui Wang

Liangzhi Xie

Hongchao Yang

Yong Shao

The present invention discloses a plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode; step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value Pand continue with a period T; step 3: when the period Tends, adjusting the first plating power supply applied on the first anode to output a power value Pand continue with a period T, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value Pand continue with a period T; and step 4: when the period Tends, adjusting the second plating power supply applied on the second anode to output a power value Pand continue with a period T; wherein step 2 to step 4 are performed periodically.

Plating apparatus and plating method

A method for cleaning semiconductor substrate without damaging patterned structure on the semiconductor substrate using ultra/mega sonic device comprises applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive the ultra/mega sonic device; before bubble cavitation in the liquid damaging patterned structure on the substrate, setting the ultra/mega sonic power supply at zero output; after temperature inside bubble cooling down to a set temperature, setting the ultra/mega sonic power supply at frequency fand power Pagain; detecting power on time at power P1 and frequency f1 and power off time separately or detecting amplitude of each waveform output by the ultra/mega sonic power supply; comparing the detected power on time with a preset time τ, or comparing the detected power off time with a preset time τ, or comparing detected amplitude of each waveform with a preset value, if the detected power on time is longer than the preset time τ, or the detected power off time is shorter than the preset time τ, or the detected amplitude of any waveform is larger than the preset value, shut down the ultra/mega sonic power supply and send out an alarm signal.

Methods and apparatus for cleaning semiconductor wafers

A system for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the system comprising: a wafer holder for temporary restraining a semiconductor wafer during a cleaning process; an inlet for delivering a cleaning liquid over a surface of the semiconductor wafer; a sonic generator configured to alternately operate at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, to impart sonic energy to the cleaning liquid, the first predetermined period of time and the second predetermined period of time consecutively following one another; and a controller programmed to provide the cleaning parameters, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

System for cleaning semiconductor wafers

The present invention discloses a method for cleaning substrate without damaging patterned structure on the substrate using ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after micro jet generated by bubble implosion and before said micro jet generated by bubble implosion damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned.

Methods and apparatus for cleaning substrates

A plating apparatus and plating methods for plating metal layers on a substrate. In an embodiment, a plating method comprises: step 1: immersing a substrate into plating solution of a plating chamber assembly including at least a first anode and a second anode (); step 2: turning on a first plating power supply applied on the first anode, setting the first plating power supply to output a power value Pand continue with a period T(); step 3: when the period Tends, adjusting the first plating power supply applied on the first anode to output a power value Pand continue with a period T, at the same time, turning on a second plating power supply applied on the second anode, and setting the second plating power supply to output a power value Pand continue with a period T(); and step 4: when the period Tends, adjusting the second plating power supply applied on the second anode to output a power value Pand continue with a period T; wherein step 2 to step 4 are performed periodically.

A method for controlling damages in cleaning a semiconductor wafer comprising features of patterned structures, the method comprising: delivering a cleaning liquid over a surface of a semiconductor wafer during a cleaning process; and imparting sonic energy to the cleaning liquid from a sonic transducer during the cleaning process, wherein power is alternately supplied to the sonic transducer at a first frequency and a first power level for a first predetermined period of time and at a second frequency and a second power level for a second predetermined period of time, the first predetermined period of time and the second predetermined period of time consecutively following one another, wherein at least one of the cleaning parameters is determined such that a percentage of damaged features as a result of the imparting sonic energy is lower than a predetermined threshold.

Method for cleaning semiconductor wafers

A method for effectively cleaning vias (), trenches () or recessed areas on a substrate () using an ultra/mega sonic device (), comprising: applying liquid () into a space between a substrate () and an ultra/mega sonic device (); setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device (); after the ratio of total bubbles volume to volume inside vias (), trenches () or recessed areas on the substrate () increasing to a first set value, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device (); after the ratio of total bubbles volume to volume inside the vias (), trenches () or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate () being cleaned.

A method for cleaning semiconductor substrate without damaging patterned structure on the substrate using ultra/mega sonic device comprising applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; before bubble cavitation in said liquid damaging patterned structure on the substrate, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after temperature inside bubble cooling down to a set temperature, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned. Normally, if f=f, then Pis equal to zero or much less than P; if P=P, then fis higher than f; if the f&#x3c;f, then, Pcan be either equal or less than P.

Methods and system for cleaning semiconductor wafers

A method for cleaning a semiconductor substrate without damaging its patterned structure via an ultra/mega sonic device comprises applying liquid into a space between the substrate and the sonic device; setting an ultra/mega sonic device power supply at a frequency fand power P; and at zero output before bubble cavitation occurs; followed by at fand Pagain after bubble temperature is lowered; detecting power on time (at P, f), power off time or amplitude of each waveform output by the power supply; comparing the detected power on time with a preset time T, power off time with a preset time &#x3c4;, amplitude of each waveform with a preset value, if the detected power on time is longer than &#x3c4;, or power off time is shorter than &#x3c4;, or amplitude of any waveform is larger than the preset value, shut down the power supply and send out an alarm.

The present invention discloses a method for effectively cleaning vias, trenches or recessed areas on a substrate using an ultra/mega sonic device, comprising: applying liquid into a space between a substrate and an ultra/mega sonic device; setting an ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside vias, trenches or recessed areas on the substrate increasing to a first set value, setting said ultra/mega sonic power supply at frequency fand power Pto drive said ultra/mega sonic device; after the ratio of total bubbles volume to volume inside the vias, trenches or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency fand power Pagain; repeating above steps till the substrate being cleaned.

An apparatus and a method for plating and/or polishing wafer includes a wafer chuck, an auxiliary nozzle apparatus and a main nozzle apparatus. The wafer chuck holds and positions the wafer, moves horizontally, and rotates. The auxiliary nozzle apparatus supplies uncharged or charged electrolyte to cover the outer edge of the wafer and the wafer chuck, and the main nozzle apparatus supplies charged electrolyte to the surface of the wafer, to improve the plating and/or polishing uniformity of the outer edge of the wafer, reduce the entire electric resistance of the apparatus, and improve the plating and/or polishing rate.

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Shanghai, China

Yinuo Jin