Intel Corporation

Yingwen Chen

Tao Xu

Satish Muthiyalu

Anil Agrawal

Fang Yuan

Ping Wu

Lei Zhu

Yu Yu

Qing Huang

Zhenglong Wu

Meera Ganesan

Systems, apparatuses and methods may provide for technology that initializes an integrated memory of a processor during a boot sequence and conducts a runtime initialization of an external system memory associated with the processor. The technology may also bypass the runtime initialization of the external system memory during the boot sequence.

Implementing external memory training at runtime

Runtime memory cell row defect detection and replacement includes detecting in a memory of a computer system operating in a runtime operating system mode, a defective row of memory cells having at least one defective cell. In response to the detection of the defective row, interrupting the operating system of the computer system and, in a runtime system maintenance mode, replacing the defective row of memory cells with a spare row of memory cells as a replacement row of memory cells. Execution of the operating system is then resumed in the runtime operating system mode Other aspects and advantages are described.

Runtime cell row replacement in a memory

An embodiment of a semiconductor package apparatus may include technology to store cache line spare information in a first memory, detect a first power state change for the first memory, and save the cache line spare information to a second memory based on the detected first power state change. Other embodiments are disclosed and claimed.

Power management for partial cache line information storage between memories

An example apparatus to monitor memory includes an error manager to compare a first memory location of a first error in the memory to a plurality of memory locations in an error history log, the plurality of memory locations previously identified in the error history log based on errors detected in the memory locations, ones of the memory locations associated with corresponding counters that track the errors detected in the memory locations, and update a first one of the counters corresponding to the first memory location when a first address of the first memory location matches a second address of one of the memory locations in the error history log. The example apparatus further includes a command generator to transmit a command to an error corrector to perform error correction on the first memory location when the first one of the counters satisfies a threshold.

Methods and apparatus to perform error detection and/or correction in a memory device

Techniques and mechanisms for providing error detection and correction for a platform comprising a memory including one or more spare memory segments. In an embodiment, a memory controller performs first scrubbing operations including detection for errors in a plurality of currently active memory segments. Additional patrol scrubbing is performed for one or more memory segments while the memory segments are each available for activation as a replacement memory segment. In another embodiment, a first handler process (but not a second handler process) is signaled if an uncorrectable error event is detected based on the active segment scrubbing, whereas the second handler process (but not the first handler process) is signaled if an uncorrectable error event is detected based on the spare segment scrubbing. Of the first handler process and the second handler process, only signaling of the first handler process results in a crash event of the platform.

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Shanghai, China

Yingwen Chen