Anhui University

Yingsong Li

Zhixiang Huang

Xingang Ren

Kaikun Niu

Xianliang Wu

Gang Wang

Lixia Yang

Siliang Wang

Run Ying

Wen Li

Lei He

Huping Ju

Shengyang Wei

Chenwei Zhang

Yali Zhao

Sungen Cao

Canping Yu

Liping Li

Guoxing Sun

Wei Zhi

Jiahong Wang

Lulu Meng

Jiayu Rao

Yong Peng

An ultra-wideband electromagnetic band gap (EBG) structure includes multiple EBG units in an array. Each EBG unit includes a power plane, a dielectric substrate and a ground plane from top to bottom. The power plane includes a patch, a coupled complementary split ring resonator (C-CSRR) and a plurality of semi-improved Z-bridge structures. Each edge of the patch is provided with a semi-improved Z-bridge structure. The C-CSRR is provided within a ring formed by the semi-improved Z-bridge structures. The Z-bridge structure includes a first horizontal branch, a first vertical branch, a second horizontal branch and a second vertical branch connected in sequence. The second vertical branch is connected to the patch. First horizontal branches of adjacent EBG units are connected to each other. A circuit board including the aforementioned EBG structure is also provided.

Ultra-wideband electromagnetic band gap (EBG) structure and circuit board

A silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure is provided, including a substrate layer; a buried oxide layer which is arranged on an upper surface of the substrate layer and is made of SiO; an active zone which is arranged on an upper surface of the buried oxide layer; a source electrode and a drain electrode which are arranged on an upper surface of the active zone; a gate dielectric layer which is arranged between the source electrode and the drain electrode; a gate electrode which is provided in the gate dielectric layer; and a heat conduction column which penetrates through the buried oxide layer, and its top wall is in contact with the active zone. The heat conduction column dissipates heat in the active zone, resulting in a lattice temperature of the active zone will not increase extremely and avoiding a decrease of a current of the drain electrode.

Silicon-on-insulator metal-oxide-semiconductor field-effect transistor (SOI MOSFET) structure

The disclosure provides a Lorentz constraint angle estimation method and a system in a non-Gaussian environment; the method includes the following steps: constructing an N-time slot received signal model based on a non-Gaussian noise environment to obtain a reflected signal; constructing a cost model based on Lorentz norm by a difference value between an actual received signal and the reflected signal, and performing an angle estimation by combining with an atomic norm to obtain a signal sparse reconstruction model; constructing an augmented Lagrangian function by the signal sparse reconstruction model, and carrying out the iterative update on the augmented Lagrangian function to obtain a reconstructed signal; and analyzing the reconstructed signal and searching spectral peaks globally to obtain spatial spectral peak points, and completing an angle estimation of the reconstructed signal.

Lorentz constraint angle estimation method and system in non-gaussian environment

A broadband fifth-generation (5G) circularly polarized filtering antenna includes a reflecting plate, a first dielectric substrate, a second dielectric substrate, a third dielectric substrate, a fourth dielectric substrate, a feed line with a phase adjustment function print on one surface of the first dielectric substrate, a ground with a chair-like groove on an other surface of the first dielectric substrate, a first rectangular radiating unit, a second rectangular radiating unit, a first metal transmission strip group and a second metal transmission strip group.

Broadband fifth-generation circularly polarized filtering antenna

Provided is a miniaturized ultra-low frequency antenna, including upper layer positive and negative electrodes, middle layer positive and negative electrodes and lower layer positive and negative electrodes, and a polyvinylidene fluoride column. The polyvinylidene fluoride column is respectively connected with the upper layer positive and negative electrodes, the middle layer positive and negative electrodes and the lower layer positive and negative electrodes. The polyvinylidene fluoride column is coated with stress electromagnetic conversion material layers. The upper layer positive and negative electrodes, the middle layer positive and negative electrodes and the lower layer positive and negative electrodes drive the polyvinylidene fluoride column to generate a deflection force through a voltage, and the stress electromagnetic conversion material layers are prompted to radiate electromagnetic waves and radiate under an action of the deflection force.

Miniaturized ultra-low frequency antenna

Disclosed is a dual-band very low frequency antenna, which comprises positive and negative electrodes, silicon substrates, piezoelectric material units, stress-electromagnetic conversion material units and an insulator. The piezoelectric material units are arranged between the positive and negative electrodes; the stress-electromagnetic conversion material units and the silicon substrates are respectively arranged at both ends of the positive and negative electrodes. The positive and negative electrodes are used for driving the piezoelectric material units; the piezoelectric material units are used for generating flutter and conducting the flutter to the stress-electromagnetic conversion material units; the stress-electromagnetic conversion material units are used for converting vibration waves generated by flutter into electromagnetic wave radiation. The application is a dual-band very low frequency antenna, and the size is far smaller than that of the traditional low-frequency antenna, and the air-water interconnection can be realized.

Dual-band very low frequency antenna

Disclosed is a ceramic piezoelectric underwater detection and 5th generation (5G) mobile phone antenna, including: a ceramic cavity, a thin film, electrode feed holes and a coating, where the thin film is embedded inside the ceramic cavity; the electrode feed holes are drilled on both sides of the thin film at one end of a bottom of the ceramic cavity; the coating is coated outside the ceramic cavity for realizing omnidirectional radiation; the thin film drives the ceramic cavity to make the coating on an outer surface of the ceramic cavity generate radiation vibrations and generate electromagnetic wave radiation for communication and underwater detection.

Ceramic piezoelectric underwater detection and 5th generation mobile phone antenna

Disclosed is a multi-layer low-profile four-arm spiral antenna, including a metal grounding plate, and a top surface of the metal grounding plate is fixedly connected with three layers of cylindrical dielectric substrates; the three layers of dielectric substrates are coaxially arranged, and the three layers of dielectric substrates are coaxially arranged with the metal grounding plate, and a gap is set between two adjacent layers of dielectric substrates; four spiral metal strips with a same rotation direction are respectively arranged on each layer of dielectric substrate, the four spiral metal strips on each layer of dielectric substrate form spiral radial arms, and a phase difference of the four spiral metal strips on each layer of dielectric substrate is 90&#xb0;; the corresponding spiral metal strips on the two adjacent layers of dielectric substrates are connected by connecting bridges, the connecting bridges are arranged in the gap.

Multi-layer low-profile four-arm spiral antenna

Growing community of inventors

Hefei, China

Yingsong Li