Kabushiki Kaisha Toshiba

Yingkang Zhang

Masaki Kondo

Masafumi Asano

Hiroshi Akahori

Kazuhiro Takahata

Kiyohito Nishihara

Shigeo Kondo

Takashi Ichikawa

Hidenobu Nagashima

Kazuaki Iwasawa

Yoko Takekawa

Tomoko Ojima

According to one embodiment, a mask pattern creation method includes extracting an area, in which a DSA material is directed self-assembled to form a DSA pattern, from a design pattern area based on a design pattern and information on the DSA material. The method also includes creating a guide pattern that causes the DSA pattern to be formed in the area based on the design pattern, the information on the DSA material, the area, and a design constraint when forming the guide pattern. The method further includes creating a mask pattern of the guide pattern using the guide pattern.

Mask pattern creation method, recording medium, and semiconductor device manufacturing method

According to one embodiment, a nonvolatile memory device includes a substrate, first and second tunnel insulating films, first and second floating gate electrodes, an intergate insulating film and a control gate electrode. The substrate has first and second active regions isolated from each other by an element isolation trench. The first and second tunnel insulating films are located in the first and second active regions, respectively. The first and second floating gate electrodes are located on the first and second tunnel insulating films, respectively. The intergate insulating film includes a first insulating layer of a first insulating material, an electron trap layer of a second insulating material on the first insulating layer, and a second insulating layer of the first insulating material on the electron trap layer. The control gate electrode is located on the intergate insulating film.

Nonvolatile memory device

Growing community of inventors

Kanagawa, Japan

Yingkang Zhang