Integrated Device Technology, Inc.

Yingbo Jia

Shih-Ked Lee

Jeong Yeol Choi

Long-Ching Wang

Guo-Qiang (Patrick) Lo

Ohm-Guo Pan

Methods for forming nitrided oxides in semiconductor devices by rapid thermal oxidation, in which a semiconductor substrate having an exposed silicon surface is placed into a thermal process chamber. Then, an ambient gas comprising N O and an inert gas such as argon or N is introduced into the process chamber. Next, the silicon surface is heated to a predefined process temperature, thereby oxidizing at least a portion of the silicon surface. Finally, the semiconductor substrate is cooled. An ultra-thin oxide layer with uniform oxide characteristics, such as more boron penetration resistance, good oxide composition and thickness uniformity, increased charge to breakdown voltage in the oxide layer, can be formed.

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Fremont, CA, United States of America

Yingbo Jia