Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Boe Technology Group Co., Ltd.

Beijing Boe Technology Development Co., Ltd.

Boe Technology Groupco., Ltd.

Yingbin Hu

Ce Zhao

Yuankui Ding

Wei Song

Wei Li

Liangchen Yan

Bin Zhou

Dongfang Wang

Jun Feng Liu

Qinghe Wang

Guangyao Li

Yang Zhang

Ning Liu

Jun Cheng

Tongshang Su

Ming Wang

Leilei Cheng

Ming Hsi Wang

Haitao Wang

Yongchao Huang

Heekyu Kim

Guangcai Yuan

Liusong Ni

Jingjing Xia

Luke Ding

Feng Zhang

Zheng Wang

Rui Ma

Jingang Fang

Jianye Zhang

Jinliang Hu

Biao Luo

Shengping Du

Yu Ji

Zhaofan Liu

Xuechao Sun

Chaowei Hao

Jifeng Shao

Junlin Peng

Chongchong Liu

A thin film transistor, including: at least one active layer pattern including a first conductive pattern, a second conductive pattern, and a semiconductor pattern; a gate on a side of the active layer pattern; a first electrode and a second electrode on a side of the gate away from the active layer pattern, and respectively electrically connected with the first conductive pattern and the second conductive pattern, a conductive shielding pattern is provided corresponding to the semiconductor pattern in at least one active layer pattern, the conductive shielding pattern is on a side of the semiconductor pattern away from the gate and is electrically connected with the first electrode, and a buffer layer is between the conductive shielding pattern and the semiconductor pattern; an orthographic projection of the conductive shielding pattern on a plane where the semiconductor pattern corresponding thereto is located at least partially covers the semiconductor pattern corresponding.

Thin film transistor, method for manufacturing the same, shift register and gate driving circuit

An array substrate includes gate lines, data lines and an insulating layer. The data lines all extend in a first direction, and the gate lines all extend in a second direction, the first direction intersecting the second direction. A data line includes first line segments and second line segments that all extend in the first direction and are arranged alternately. The second line segments are disposed at a side of the gate lines proximate to the base, and the first line segments are disposed at a side of the gate lines away from the base. There is no overlap among orthographic projections of the first line segments on the base and orthographic projections of the gate lines on the base. The insulating layer includes first vias. In the first direction, any two adjacent first line segments are electrically connected to a second fine segment through at least two first vias.

Array substrate including non-overlapping line segments and gate lines and manufacturing method therefor, and display device

A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.

Light-emitting device and method for manufacturing the same, and display panel

A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

Light-emitting component, manufacturing method therefor, mask, and display device

The present disclosure provides an OLED display panel and a method for detecting the OLED display panel, and a display device. The OLED display panel includes a base substrate including a display area and a non-display area surrounding the display area and having a first region adjacent to the display area. The display area includes a drive signal line and a power supply voltage signal line both extending from the display area to the first region. The drive signal line includes, in the first region, a first section of wiring at an anode layer, the power supply voltage signal line includes, in the first region, a second section of wiring at a gate metal layer, and parts of the drive signal line and the power supply voltage signal line in the display area are located at a source-drain metal layer.

OLED display panel in which each drive signal line includes first section of wiring at anode layer and each power supply voltage signal line includes second section wiring at gate metal layer, and method for detecting the OLED display panel, and display device

The present disclosure relates to the display technology, and provides an OLED display substrate, a method for manufacturing the OLED display substrate and a display device. The method includes: forming pixel definition layer transition patterns with metal; and oxidizing the pixel definition layer transition patterns to form an insulative pixel definition layer.

Method for manufacturing organic light-emitting diode display substrate

The disclosure provides a thin film transistor, a manufacturing method thereof, a display substrate and a display apparatus. The thin film transistor comprises a base substrate, and an active layer disposed on the base substrate, and the active layer comprises a channel region, and a source contact region and a drain contact region respectively positioned at two sides of the channel region; and a portion of at least one of the source contact region and the drain contact region close to the channel region includes a plurality of first sub-grooves disposed at a side of the active layer proximal to the base substrate and a plurality of second sub-grooves disposed at a side of the active layer distal to the base substrate, and the plurality of first sub-grooves and the plurality of second sub-grooves being alternately disposed along a direction parallel to an extension of the channel region.

Thin film transistor and manufacturing method thereof, display substrate and display apparatus

A photoresist composition and manufacturing method thereof, a manufacturing method of a metal pattern, and a manufacturing method of an array substrate are provided. The photoresist composition includes a base material and an ion adsorbent, and the ion adsorbent is chelating resin.

Photoresist composition, its manufacturing method, and manufacturing methods of metal pattern and array substrate

A sterilization structure, a sterilization board, and a display device are disclosed. The sterilization structure includes an active layer, wherein, one surface of the active layer has an exposed region, and a material of the active layer includes a laser-induced graphene material.

Sterilization structure, sterilization board and display device

This disclosure discloses an array substrate, and a production method, a display panel, and a display apparatus thereof. Particularly, this disclosure proposes a method of producing an array substrate, having the following steps: providing a substrate having a drive transistor region and a switch transistor region thereon; forming an preset layer for active layer on a side of the substrate; patterning the preset layer for active layer to form a drive active layer and a switch active layer, wherein an orthographic projection of the drive active layer on the substrate is located in the drive transistor region, an orthographic projection of the switch active layer on the substrate is located in the switch transistor region, and a carrier concentration in the drive active layer is less than a carrier concentration in the switch active layer.

Array substrate, and production method thereof, display panel, and display apparatus

The present disclosure provides a positive photoresist composition including a major adhesive material and a photosensitizer, wherein the photoresist composition further includes a photoisomerizable compound which would be converted into an ionic structure with an increased degree of molecular polarity after ultraviolet irradiation. The formation of the ionic structure with increased polarity of the molecule reduces the adhesion between the positive photoresist and the organic film layer, facilitates stripping after formation of the via, and improves the product rate of pass. Further, the present disclosure provides a via-forming method using the positive resist composition, a display substrate including the via formed by the via-forming method, and a display device including the display substrate.

Positive photoresist composition, via-forming method, display substrate and display device

A display substrate and a manufacturing method thereof, and a display device, are disclosed. The display substrate includes a base substrate and a thin film transistor (TFT) array, including a plurality of TFTs. A first electrode in each TFT includes a first portion and a second portion, a height of the second portion being greater than a height of the first portion in a direction perpendicular to the base substrate, wherein the first portion forms a groove with respect to the second portion and a wall of the groove comprises the second portion of the first electrode of a thin film transistor adjacent to the TFT. A bottom of the groove is the first pixel electrode of a light emitting element, wherein an organic light emitting functional layer is deposited in the groove on the first pixel electrode, and the second pixel electrode on the organic light emitting functional layer.

Display substrate and manufacturing method thereof, and display device

A display substrate includes a base substrate; and a single pixel definition layer on the base substrate defining a plurality of subpixel apertures. The single pixel definition layer includes a plurality of hydrophobic particles dispersed in a main body for enhancing hydrophobicity of a portion of the single pixel definition layer.

Display substrate, display apparatus, method of fabricating display substrate, and pixel definition material for forming pixel definition layer of display substrate

The present disclosure is related to a thin film transistor. The thin film transistor may include an active layer; a gate insulating layer on the active layer; and a gate and a plurality of metal films on the gate insulating layer. The plurality of metal films may be spaced apart from the gate, and insulated from the gate and the active layer.

Thin film transistor, fabricating method thereof, and display apparatus

A thin film transistor includes an active layer, a source electrode and a drain electrode. The active layer includes a conductive region and the conductive region is between the source electrode and the drain electrode and is spaced apart from at least one of the source electrode and the drain electrode.

Growing community of inventors

Beijing, China

Yingbin Hu