Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Ya Hsu

Chung-Shu Wu

Yuan-Hung Chiu

An Chyi Wei

Hsiu-Hao Tsao

Ching-Yu Pan

Ryan Chia-Jen Chen

Shu-Uei Jang

Yu-Wen Wang

An-Chyi Wei

A method includes forming a fin on a substrate, forming an insulating material over the fin, recessing the insulating material to form an isolation region surrounding the fin, wherein an upper portion of the fin protrudes above the isolation region, performing a trimming process to reduce a width of the upper portion of the fin, and forming a gate structure extending over the isolation region and the upper portion of the fin.

FinFET device and method

A method for forming a semiconductor device structure includes providing a substrate having a first fin structure and a second fin structure that are capped by a patterned hard mask structure. A liner layer and an overlying insulating layer are formed between the first and second fin structures. A multi-step etching process including a first step of selectively removing the patterned hard mask structure and a second step of in-situ and selectively removing a portion of the insulating layer to form an isolation feature is performed. The process gas used in the multi-step etching process includes a first etching gas and a second etching gas. The flow rate of the first etching gas is greater than that of the second etching gas in the first step and the flow rate of the first etching gas is less than that of the second etching gas in the second step.

Method for forming fin field effect transistor (FinFET) device structure

Growing community of inventors

Hsinchu, Taiwan

Ying-Ya Hsu