Playnitride Display Co., Ltd.

Ying-Tsang Liu

Tzu-Yang Lin

Yi-Chun Shih

Yi-Ching Chen

Pei-Hsin Chen

Yu-Hung Lai

Yu-Chu Li

Chih-Ling Wu

Huan-Pu Chang

Yun-Li Li

Sheng-Yuan Sun

Yu-Yun Lo

Kuan-Yung Liao

Yi-Min Su

Mi-Hung Lai

A micro light emitting diode panel is provided. The micro light emitting diode panel includes a circuit substrate, a plurality of transistor devices and a plurality of micro light emitting diode devices. The transistor devices are bonded to the circuit substrate. Each of the transistor devices has a semiconductor pattern, a source electrode, a drain electrode and a gate electrode. The source electrode and the drain electrode are electrically connected to the semiconductor pattern. The source electrode, the drain electrode, and the gate electrode are located between the semiconductor pattern and the circuit substrate. The electron mobility of the semiconductor pattern is greater than 20 cm/V·s. The micro light emitting diode devices are bonded to the circuit substrate, and are electrically connected to the transistor devices respectively.

Micro light emitting diode panel

The present invention discloses a flexible micro device display panel which comprises a substrate, a plurality of micro light emitting units, a first trace line, and a backup conductive line. The substrate comprises a display region having a bending area and a non-bending area. The plurality of micro light emitting units are disposed on the substrate within the display region. The first trace line is arranged from the non-bending area to the bending area. The backup conductive line is disposed at a second metal layer and coupled with the first trace line. The first metal layer and the second metal layer are disposed on the substrate, and the distance between the substrate and the first metal layer is different from the distance between the substrate and the second metal layer. The backup conductive line is not disposed within the non-bending area.

Flexible micro device display panel

A micro LED display device including a display substrate, a plurality of conductive pad pairs and a plurality of micro light emitting elements is provided. The display substrate has a first arranging area, a splicing area connected to the first arranging area, and a second arranging area connected to the splicing area, wherein the splicing area is located between the first arranging area and the second arranging area. The conductive pad pairs are disposed on the display substrate in an array with the same pitch. The micro light emitting elements are disposed on the display substrate and are electrically bonded to the conductive pad pairs. A manufacturing method of the micro LED display device is also provided.

Manufacturing method of micro LED display device

A micro semiconductor device and a micro semiconductor display are provided. The micro semiconductor device includes an epitaxial structure, a first electrode, a second electrode and a supporting layer. The epitaxial structure has a bottom surface and a top surface, wherein the bottom surface is defined as a central region and a peripheral region. A first electrode and a second electrode are disposed on the central region of the bottom surface of the epitaxial structure, or the first electrode is disposed on the central region of the bottom surface of the epitaxial structure and the second electrode is disposed on the top surface of the epitaxial structure. The supporting layer is disposed on the peripheral region of the bottom surface of the epitaxial structure.

Micro semiconductor device and micro semiconductor display

A method of fabricating a micro light emitting diode (LED) panel is provided. The method includes forming a semiconductor material substrate, forming a plurality of transistor devices, transferring and bonding the transistor devices onto a circuit substrate, and transferring a plurality of micro LED devices from a micro LED device substrate to the circuit substrate. The semiconductor material substrate includes a carrier, a release layer, an inorganic insulation layer, and a semiconductor material layer. The release layer is located between the carrier and the inorganic insulation layer. The semiconductor material layer is bonded to the release layer through the inorganic insulation layer. Electron mobility of the semiconductor material layer is greater than 20 cm/V&#xb7;s. The transistor devices are disposed on the release layer and are electrically connected to the circuit substrate. The micro LED devices are electrically connected to the transistor devices. A micro LED panel is also provided.

Semiconductor material substrate, micro light emitting diode panel and method of fabricating the same

A carrier structure suitable for transferring or supporting a plurality of micro devices includes a carrier and a plurality of transfer units. The carrier has a carrier surface and a plurality of recesses disposed on the carrier surface. The transfer units are respectively disposed in the recesses and a plurality of transferring surfaces are exposed. Each micro device has a device surface. The transferring surface of each transfer unit is configured to be connected to the device surface of the corresponding micro device. A micro device structure including the carrier structure is also provided.

Carrier structure and micro device structure

A micro LED display panel includes a display area, a plurality of micro light-emitting elements and a plurality of micro control elements. The plurality of micro light-emitting elements is disposed in the display area and include a plurality of first color micro LEDs and a plurality of second color micro LEDs. A light wavelength of each of the first color micro LEDs is different from a light wavelength of each of the second color micro LEDs. The plurality of micro control elements is disposed in the display area, and include a plurality of first color micro circuit-chips and a plurality of second color micro circuit-chips. The plurality of first color micro circuit-chips control the plurality of first color micro LEDs, and the plurality of second color micro circuit-chips control the plurality of second color micro LEDs.

Micro light-emitting diode display panel having control element for controlling multiple micro light-emitting diodes emitting the same color

Micro LED display device and manufacturing method thereof

A micro LED carrier board is provided. The micro LED carrier board includes a substrate structure having a first surface and a second surface and having a central region and a peripheral region on the outside of the central region. The micro LED carrier board includes a plurality of micro LED elements forming an array and on the second surface of the substrate structure. The micro LED carrier board includes a patterned structure formed on the first surface and the second surface. The patterned structure has a first pattern density in the central region and a second pattern density in the peripheral region, and the first pattern density is different from the second pattern density.

Micro LED carrier board

A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, at least one supporting layer, and at least one micro semiconductor device. The supporting layer includes at least one upper portion and a bottom portion, wherein the upper portion extends in a first direction. The length Lof the upper portion in the first direction is greater than the length Lof the bottom portion in the first direction. Furthermore, the bottom surface of the micro semiconductor device is in direct contact with the upper portion of the supporting layer.

Micro semiconductor structure

A display apparatus includes a driving substrate and a plurality of micro light-emitting devices (LEDs). The driving substrate has a plurality of pixel regions. The plurality micro LEDs are disposed in in each of the pixel regions and electrically connected to the driving substrate. Orthogonal projection areas of the micro LEDs in each of the pixel regions on the driving substrate are equal. At least two micro LEDs in each of the pixel regions have different effective light-emitting areas.

Display apparatus

A micro semiconductor structure is provided. The micro semiconductor structure includes a substrate, a plurality of micro semiconductor devices disposed on the substrate, and a first supporting layer disposed between the substrate and the micro semiconductor devices. Each of the micro semiconductor devices has a first electrode and a second electrode disposed on a lower surface of the micro semiconductor devices. The lower surface includes a region, wherein the region is between the first electrode and the second electrode. An orthographic projection of the first supporting layer on the substrate at least overlaps an orthographic projection of a portion of the region on the substrate. The first supporting layer directly contacts the region.

Growing community of inventors

Miaoli County, Taiwan

Ying-Tsang Liu