Winbond Electronics Corporation

Windbond Electronics Corp.

Ying-Te Tu

Chien-Ti Hou

Hsi-Yuan Wang

Yu-Chang Lin

Cheng-Han Lee

Cheng Han Lee

A refresh control circuit includes a clock signal generator, a plurality of pulse number adjusters and a plurality of address counters. The clock signal generator generates a clock signal. The pulse number adjusters receive the clock signal, and during a time period, respectively generate a plurality of adjusted clock signals by adjusting pulse number of the clock signal according to a plurality of data retention information. The address counters respectively generate a plurality of refresh address information according to the adjusted clock signals. The refresh address information respectively correspond to a plurality of memory banks of a memory device. The memory banks respectively perform refresh operations according to the refresh address information.

Refresh control circuit

An electronic device and a control method for memory refresh operation thereof are provided. The electronic device includes a memory and a controller. The memory includes a plurality of timers, a plurality of buffers and an interrupt signal generator. Each of the buffers is configured to store at least one word line information, and generate a refresh word line information according to a timing result trigger signal of each corresponding timer. The interrupt signal generator generates an interrupt signal corresponding to an auto refresh operation according to the timing result trigger signal, a non-internal self-refresh mode signal and a non-accessing status. The controller receives the interrupt signal and transmits an auto refresh command to the memory according to the interrupt signal to enable the memory to perform the auto refresh operation.

Electronic device and control method for memory refresh operation thereof

Disclosed is a memory chip including a plurality of first power pads and a first bus. The first bus is connected to the first power pads. One of the first power pads is coupled to the first bus via a switch device. A data width of the memory chip is determined according to a conduction state of the switch device.

Memory chip

A memory device includes at least one memory cell block, a first edge block, a second edge block, multiple first sense amplifiers, and multiple second sense amplifiers. The first edge block is coupled to multiple first word lines, where at least one of the first word lines receives an enabled first word line signal. The second edge block is coupled to multiple second word lines, where at least one of the second word lines receives an enabled second word line signal. The first sense amplifiers are disposed between the first edge block and the memory cell block. The second sense amplifiers are disposed between the second edge block and the memory cell block.

Memory device

A method for accessing memory and a memory device using the same method are provided. The method includes: coupling, by a first sense amplifier (SA) of a memory, to a memory cell of the memory to receive data from the memory cell; coupling a first terminal of a transistor of the memory to the first SA; coupling a first command terminal of a system on chip (SoC) to a second terminal of the transistor, and coupling a first input/output (I/O) terminal of the SoC to a third terminal of the transistor; and issuing, by the SoC, an access command to the second terminal of the transistor to access the data output by the first SA through the third terminal of the transistor.

Method for accessing memory and memory device using the same

A pseudo static memory device includes multiple memories, an arbiter and a controller. The memories respectively generate multiple self-refresh request signals. Each of the self-refresh request signals indicates a time period for performing self-refresh operation of corresponding memory. The arbiter receives the self-refresh request signals and generates a latency synchronize flag during the memories being enabled. The controller decides an accessing latency for accessing the memories during an accessing operation according to the latency synchronize flag.

Pseudo static memory device

A bit data shifter receives an input signal and a plurality of clock signals. The bit data shifter includes a plurality of data shifter groups cascaded in sequence, and each of the plurality of data shifter groups cascaded in sequence includes a plurality of data latches cascaded in sequence and a master-slave flip-flop. The plurality of data latches cascaded in sequence is configured to delay the input signal in sequence based on the plurality of clock signals to generate a plurality of delayed signals. The master-slave flip-flop is configured to delay one of the plurality of delayed signals based on one of the plurality of clock signals to generate an input signal of a next data shifter group.

Bit data shifter

A memory device is provided. The memory device includes: a memory cell array; a monitoring circuit, and an event-checking circuit. The monitoring circuit is configured to detect one or more event parameters of the memory cell array, wherein the one or more event parameters correspond to one or more interrupt events of the memory cell array. The event-checking circuit is configured to determine whether to assert an interrupt signal according to the one or more event parameters detected by the monitoring circuit. In response to the event-checking circuit determining to assert the interrupt signal, a processor handles the one or more interrupt events of the memory device according to the interrupt signal.

Memory device and method for handling interrupts thereof

A random number generator is provided. The random number generator includes a linear feedback shift register and rotator. The linear feedback shift register is configured to provide a first pseudo-random number signal with a first value, wherein the first pseudo-random number signal includes a plurality of bits. The rotator is configured to shift and rotate the plurality of bits of the first pseudo-random number signal according to a signal to generate a second pseudo-random number signal with a second value. The second value is different from the first value.

Random number generator and method for generating random numbers

An integrated circuit and a detection method for multi-chip status thereof are provided. The integrated circuit includes at least one chip. The at least one chip has a stack status pin and a busy pin. The at least one chip applies a bias voltage on the busy pin according to a voltage status of the stack status pin. The at least one chip further detects an indication voltage on the busy pin, and decides whether a number of the at least chip is plural according to the indication voltage on the busy pin.

Integrated circuit and detection method for multi-chip status thereof

A memory device is provided. The memory device includes a pseudo static random access memory (PSRAM), a word line (WL) arbitrator and a refresh controller. The WL arbitrator receives a WL signal and segments the WL signal according to a burst length setting value, to obtain a segmented WL signal. In a synchronous mode, the refresh controller provides a first refresh trigger signal corresponding to the WL signal to refresh the PSRAM. In a smart refresh mode, the refresh controller provides a second refresh trigger signal corresponding to the segmented WL signal to refresh the PSRAM.

Memory device and refresh method for PSRAM

A fuse array and a memory device are provided in the invention. The fuse array includes a plurality of fuses and a plurality of first D flip-flops. The fuses are configured to generate a plurality of data signals. Each of the first D flip-flops is respectively coupled to one corresponding fuse of the fuses to receive the data signal from the corresponding fuse and the first D flip-flops transmit a clock signal and the data signal to a plurality of second D flip-flops comprised in a plurality of memory cells. The first D flip-flops are connected in series and the second D flip-flops are connected in series.

Fuse array and memory device

An e-fuse device includes a transferring circuit, a detecting-and-outputting circuit, and a fusing circuit. The transferring circuit transfers an input signal to a data node. The detecting-and-outputting circuit generates an output signal according to the logic level of the data node. The fusing circuit includes an e-fuse cell, a first transistor, a second transistor, and a switch element. The e-fuse cell is coupled between a high-voltage node supplied with the high voltage or a ground and a first node. The first transistor is coupled between the first node and a second node and is controlled by the output signal. The second transistor is coupled between the second node and the ground and is controlled by a fusing signal. The switch element is coupled between the first node and the data node and is controlled by a switch signal.

E-fuse device and array thereof

A memory circuit is provided. The memory circuit includes a memory array, a plurality of word lines and a memory controller. The memory array has a plurality of memory blocks. The memory controller outputs an access instruction and an access address to address the word lines for accessing the memory array, or the memory controller outputs a refresh instruction and a refresh address to address the word lines for refreshing the memory array, wherein the memory controller performs a refresh operation on each of the memory blocks corresponding to each of the word lines at predetermined intervals. The memory controller counts the number of times the access instructions have been output and determines whether that number equals a predetermined value or not. According to the determination result, the memory controller selects an address adjacent to the access address as the refresh address for the next refresh operation.

Memory circuit and refresh method thereof

A control circuit, a memory device and a voltage control method thereof are provided. The memory device includes a memory cell, a voltage regulator circuit and the control circuit. The control circuit receives a clock signal, and determines a clock frequency of the clock signal so as to generate a control signal. An operation voltage is converted into an internal supply voltage for supplying the control circuit by the voltage regulator circuit according to the control signal.

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Kaohsiung, Taiwan

Ying-Te Tu