Advanced Semiconductor Engineering, Inc.

National Chung Hsing University

Advanced Semiconductor Engineering, Inc. Kaohsiung, Taiwan

Ying-Ta Chiu

Chih-Pin Hung

Dao-Long Chen

Ping-Feng Yang

Yong-Da Chiu

Shang-Kun Huang

Chih-Cheng Lee

Shin-Luh Tarng

Chiu-Wen Lee

Kwang-Lung Lin

Jenn-Ming Song

Po-Hsien Sung

Shiu-Chih Wang

A semiconductor package includes an electrical connection structure. The electrical connection structure includes: a first conductive layer; a second conductive layer on the first conductive layer; and a conductive cap between the first conductive layer and the second conductive layer, the conductive cap having a hardness greater than a hardness of the first conductive layer.

Semiconductor packages

A semiconductor device includes a semiconductor element, a trace disposed adjacent to a surface of the semiconductor element, a bonding pad disposed adjacent to the surface of the semiconductor element and connected to the trace, and a pillar disposed on the bonding pad. The pillar includes a first end wall, a second end wall opposite the first end wall, a first side wall, and a second side wall opposite the first side wall. The first side wall and the second side wall connect the first end wall to the second end wall. One or both of the first side wall and the second side wall incline inwardly from the first end wall to the second end wall. The pillar is disposed on the bonding pad such that the first end wall is closer to the trace than is the second end wall.

Semiconductor devices and semiconductor packages

The present disclosure relates to a method for manufacturing a semiconductor device. The method includes providing a first electronic component including a first metal contact and a second electronic component including a second metal contact, changing a lattice of the first metal contact, and bonding the first metal contact to the second metal contact under a predetermined pressure and a predetermined temperature.

Semiconductor device and method for manufacturing the same

A semiconductor package structure includes a substrate, a semiconductor element, an encapsulant, an adhesion layer and a metal cap. The semiconductor element is disposed on the substrate. The encapsulant covers the semiconductor element. The adhesion layer is disposed on the encapsulant. The metal cap is attached to the encapsulant by the adhesion layer, and the metal cap is conformal with the encapsulant.

Semiconductor package structure and method for manufacturing the same

A semiconductor package includes: a first substrate including a first interconnection structure extending from a surface of the first substrate, the first interconnection structure including grains of a first size, a second substrate including: a second interconnection structure comprising grains of a second size, and a third interconnection structure disposed between the first interconnection structure and the second interconnection structure, the third interconnection structure including grains of a third size, a first sidewall inclined at a first angle to a reference plane and a second sidewall inclined at a second angle to the reference plane, wherein the first angle is different from the second angle, the first sidewall is disposed between the first substrate and the second sidewall, and the third size is smaller than both the first size and the second size.

Growing community of inventors

Kaohsiung, Taiwan

Ying-Ta Chiu