Exxonmobil Chemical Patents Inc.

China Flash Co., Ltd.

China Flash Co., Ltd. Shanghai

Ying Sun

Hong Nie

Yi Ping Ni

Zeyu Zhu

Pei Te Bao

Peijun Jiang

John Robert Hagadorn

Andy Haishung Tsou

Jie Hui Xu

Yue Zhao

Sarah J Mattler

Saifudin M Abubakar

Alexander I Norman

Xin Chen

Arturo Leyva

Gregory K Hall

Yi Shi

Shanshan Zhang

Xiaoyun Wang

Li Yuan

Yihe Shen

Yujie Sheng

Hongchao Wang

Guangdi Chen

The present disclosure relates to comb-block copolymers and methods thereof. In some embodiments, a copolymer includes a first block comprising an ethylene-propylene copolymer; and a second block comprising a high density polyethylene. In some embodiments, a polyethylene composition includes the copolymer and a branched vinyl/vinylidene-terminated high density polyethylene. In some embodiments, a process for producing a polyethylene composition includes polymerizing ethylene, at a temperature of at least 100° C., by introducing the ethylene to a first catalyst system having a first catalyst compound and a first activator to form a branched vinyl/vinylidene-terminated high density polyethylene. The process includes introducing the branched vinyl/vinylidene-terminated high density polyethylene to additional ethylene, propylene, and a second catalyst system having a second catalyst compound and a second activator. The process includes obtaining the polyethylene composition.

Comb-block copolymers and methods thereof

An electronic device, and an over-erase detection and elimination method for memory cells are provided; the method includes: performing an erase operation on a specified area; selecting all the memory cells in the selected area one by one; measuring a threshold voltage of a selected memory cell for over-erase detection to see if it is less than a normal erase threshold voltage; if not, selecting the next memory cell for over-erase detection, and if yes, then performing a soft-write operation on the selected memory cell; after the soft-write operation, performing over-erase detection again to see whether the threshold voltage of the selected memory cell is within a normal threshold range; and if not, performing a soft-write operation again, and if yes, the next memory cell is selected for over-erase detection, until the threshold voltages of all the memory cells selected for erasure are within the normal threshold range.

Electronic device, over-erase detection and elimination methods for memory cells

A sensitive amplifier and a storage device are provided, and the sensitive amplifier includes: a voltage clamp circuit which provides a stable reading voltage for the storage unit; a power switch circuit which cuts off power supply for the voltage clamp circuit when the voltage clamp circuit is not operating; a discharge circuit which discharges the voltage clamp circuit before the voltage clamp circuit operates; a pre-charge circuit which pre-charges the voltage clamp circuit when the voltage clamp circuit starts operating; and a current comparison circuit which is connected to an output of the voltage clamp circuit, compares the reading current with a reference current, and outputs a comparison result.

Sensitive amplifier and storage device

A word line decoding circuit and memory comprises a first address decoding module to obtain word line logic signals; a word line pre-coding module to obtain word line pre-coding signals and first switch signals; a second address decoding module to obtain first and second selection signals; a third address decoding module to obtain third selection signals; a first level conversion module which performs level conversion on the first selection signals to obtain first and second control signals; a second level conversion module which performs level conversion on the second selection signals to get third and fourth control signals; a third level conversion module which performs level conversion on the third selection signals to obtain fifth control signals; a word line toggle switch signal generation module which generates second switch signals based on each control signal; and a word line toggle module to generate word line signals.

Word line decoding circuit and memory

The present invention relates to a polymer composition comprising a thermoplastic polyester and a propylene-based elastomer, wherein the propylene-based elastomer comprises propylene-derived units and 5 to 30 wt % of &#x3b1;-olefin-derived units, and has a melting temperature of less than 120&#xb0; C. and a heat of fusion of less than 75 J/g.

Polyester compositions, and process for making articles therefrom

Provided is a composition having 70 wt % to 90 wt % of a first propylene-olefin copolymer component having an ethylene content of 15 to 21 wt %; and 10 wt % to 30 wt % of a second propylene-olefin copolymer component having an ethylene content of 6 to 10 wt %; wherein the weight average molecular weight of the first component is 250,000 to 1,780,000 g/mol higher than the weight average molecular weight of the second component; wherein the reactivity ratio product of the first component is less than 0.75; wherein the reactivity ratio product of the second component is greater than or equal to 0.75.

Propylene-olefin copolymers and methods for making the same

The present invention is related to a propylene-based injection molded composition made from a polymer blend comprising from 45 to 85 wt % of a polymer blend modifier having a weight average molecular weight of 10,000 to 100,000 g/mole and from 15 to 55 wt % of a propylene-based elastomer having a weight average molecular weight of from 100,000 to 300,000 g/mole, where the weight percent of the polymer blend modifier and the propylene-based elastomer are based on the total weight of the polymer blend. The polymer blend modifier comprises a first propylene-based polymer and a second propylene-based polymer, where the first and second propylene-based polymers are different and are individually selected from a homopolymer of propylene or a copolymer of propylene and ethylene or a Cto Calpha-olefin.

Propylene-based polymer compositions for injection molding

Growing community of inventors

Shanghai, China

Ying Sun